Sanyo EP92H manual IntegratedISystem inin Board, ISB-Solo, ISB-Duo, ISB-Quad

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SANYO Original technology Module technologies that achieve high-density and thinner form factors

IntegratedISystem inin Board

Integrated System in Board Process Lineup

ISB-Solo

Thickness of only 0.45 mm (0.65 mm if resistors are included) realizes excellent thermal radiation and short development TAT

Optimal for SiP implementation of small-scale block that includes semi-power semiconductors.

Assembly structure examples

Application example (Cell phone charger circuit block)

Integrated System in Board is a type of SiP (system in package) technology, and is a module technology that achieves high densities and thinner form factors by using SANYO's unique substrate and mounting technologies. The Integrated System in Board lineup consists of three types of process: ISB-Solo, ISB-Duo, and ISB-Quad. Which process is used is selected based on the application.

In addition to standard products, customer specified circuit blocks can also be converted to Integrated System in Board using an optimal process, thus creating a new module device in a short time.

Noise suppression effect (measured)

Reasons noise can be reduced by Integrated Sysytem in Board

Reduced wiring area due to implementation as miniature modules

Integration of noise reducing components

Supply voltage stabilization by using dedicated layers for power supply and ground

Earlier mounting

Integrated System in Board

 

 

 

Integration of noise

 

 

 

reducing components

 

 

 

LSI

Integrated System in Board

Top surface

Back surface

 

 

 

 

Dedicated power

 

4.45 4.45 0.65 mm3

supply/ground layer

 

Mounting area

reduced by 80%

 

Wiring on board Integration of noise reducing components

Microcontroller

SRAM

ISB-Duo

Adopts unique SANYO-developed 0.2 mm thickness high-density substrate (2 layers) Line 40 m / Space 40 m at 25 m thickness copper foil,

Via diameter 100 m / Via land diameter 150 m

Thickness of only 0.53 mm (0.73 mm if resistors are included) realizes high-density mounting

Optimal for SiP implementation of high-frequency (up to 10 GHz) blocks, blocks that require performance or EMC workarounds based on component placement/wiring pattern, and blocks that require partial high-density mounting.

Assembly structure examples

Application example (Clock detector block)

 

 

Earlier mounting

Integrated System in Board

 

 

Surface scan using a field probe

ISB-Duo (2-layer ISB)

Separate microcontroller

and SRAM

 

Noise is reduced significantly

Integrated System in Board stack structure (high-density mounting) Integration of noise reducing components

10 mm 10 mm

Microcontroller

SRAM

Evaluation results using a microcontroller and SRAM (Surface probe method - 30 MHz to 1 GHz)

Integrated System in Board

Top surface

Back surface

4.3 4.3 0.73 mm3

Heat dissipation effect (simulation)

Mounting area

reduced by 58%

97

Typical BGA

 

 

 

ISB-Quad

Adopts unique SANYO-developed 0.24 mm thickness high-density substrate (4 layers)

Thickness of only 0.6 mm realizes high-density mounting

Optimal for SiP implementation of high-frequency (up to 10 GHz) blocks, blocks that require performance or EMC workarounds based on component placement /wiring pattern, and subsystems that require high- density mounting.

Chip-on-Board type

Assembly structure examples

ISB-Duo

Passive components

WS-CSP

Flip Chip

(resistors and capacitors)

 

 

 

 

MK

 

89

 

 

 

Z

 

81

Y

X

 

 

73

 

 

65

 

 

57

Integrated System Board package

 

 

 

MK

 

49

Z

 

 

Y

X

41Integrated System Board that dissipates heat

MK

33

YX

Maximum temperature

92.7 [°C]

Temperature

difference

38.4°C

Temperature

difference

52.3°C

Maximum

temperature

54.3 [°C]

Maximum

temperature

40.4 [°C]

Analysis conditions

Chip heat generation

3 [W]

Chip size

440.3 [mm3]

Land size

550.03 [mm3]

Atmospheric temperature

25 [°C]

Cooling conditions

Ideal cooling of the solder lower

surface; 25 [°C]

 

 

 

Analysis model

1/4 model (since symmetrical)

 

 

25

ISB-Quad

0.24 mm

6

 

 

 

7

 

 

 

 

 

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Contents Cell Phone Devices N T E N T S Sanyo Group Cellll Phone Components IntegratedISystem inin Board ISB-SoloISB-Duo ISB-QuadSR Series LC822964Earlier mounted Cell Phone Block Diagram Examples Frame Transfer Full-Color CCD Sensors Frame Transfer CCDMultifunction DSP chip High sensitivityType 3.2 MP CCD Camera Module for Cell Phones LC99359+LC99812LC99359 LC99812System-on-chip FM Radio ICs for Miniature Cell Phones Easy Radio Ictm LV24000 SeriesApplication Example LV24002 LV24000Function and lineup System-on-chip FM Radio ICs Easy Radio Ictm SeriesChanging Total Costs Sound Generator IC Midi Audio Compression ICNTSC/PAL Video Encoder Terrestrial Digital One-Segment ChipsetCell Phone Video Drivers Earphone Mic Solutions What is an earphone mic?LED Driver ICs CCD Power Supply IC for Camera Cell Phones New Charge Pump ICsLV5711FN White LEDMotor Drivers for Cell Phones Amorphous Optical Sensors Amorphous Optical SensorsAmorphous Optical Sensor Structure Amorphous Optical Sensor Application ExamplesUltralow on-resistance MOS devices for power management Low VF/IR Schottky barrier diodes for power managementSANYOs Lineup of High-Reliability Discrete Devices LCD backlight ultralow saturation voltage transistorsFETs for Cell phone ECM Digital Cell Phone 0.8 GHz, 1.5 GHzPower MOSFETs+ Schottky Barrier Diodes for logic block Ultralow on-resintance Power MOSFETs for RF and logic blockMicrowave Device Series Low saturation voltage transistors for logic blockOrdering Number EP92H