Microwave Measurement Procedure USA, Leakage test

CDMOS200

DMOS200

VMOS200

CVMOS200

MICROWAVE MEASUREMENT PROCEDURE (USA)

A. Requirements:

1)Microwave leakage limit (Power density limit): The power density of microwave radiation emitted by a microwave oven should not exceed 1mW/cm2 at any point 5cm or more from the external surface of the oven, measured prior to acquisition by a purchaser, and thereafter (through the useful life of the oven), 5 mW/cm2 at any point 5cm or more from the external surface of the oven.

2)Safety interlock switches:

Primary interlock relay switch shall prevent microwave radiation emission in excess of the requirement as above mentioned. Secondary interlock relay and door sensing switch shall prevent microwave radiation emission in excess of 5 mW/cm2 at any point 5cm or more from the external surface of the oven.

B. Preparation for testing:

Before beginning the actual measurement of leakage, proceed as follows:

1) Make sure that the actual instrument is operating normally as specified in its instruction booklet.

Important:

Survey instruments that comply with the requirement for instrumentation as prescribed by the performance standard for microwave ovens, 21 CFR 1030.10(c)(3)(i), must be used for testing.

2)Place the oven tray in the oven cavity.

3)Place the load of 275±15 ml (9.8 oz) of tap water initially at 20±5 O C (68OF) in the center of the oven cavity.

The water container shall be a low form of 600 ml (20 oz) beaker with an inside diameter of approx. 8.5 cm (3-1/2 in.) and made of an electrically nonconductive material such as glass or plastic.

The placing of this standard load in the oven is important not only to protect the oven, but also to insure that any leakage is measured accurately.

4)Set the cooking control on Full Power Cooking Mode.

5)Close the door and select a cook cycle of several minutes. If the water begins to boil before the survey is completed, replace it with 275 ml of cool water.

C. Leakage test:

Closed-door leakage test (microwave measurement):

1)Grasp the probe of the survey instrument and hold it perpendicular to the gap between the door and the body of the oven.

2)Move the probe slowly, not faster than 1 in./sec. (2.5 cm/sec.) along the gap, watching for the maximum indication on the meter.

3)Check for leakage at the door screen, sheet metal seams and other accessible positions where the continuity of the metal has been breached (eg., around the switches, indicator, and vents).

While testing for leakage around the door, pull the door away from the front of the oven as far as is permitted by the closed latch assembly.

4)Measure carefully at the point of highest leakage and make sure that the highest leakage is no greater than 4mW/cm2, and that the primary interlock switch/secondary interlock relay does turn the oven OFF before any door movement.

NOTE: After servicing, record data on service invoice and microwave leakage report.

CVMOS200, CDMOS200, DMOS200, VMOS200 specifications

The Viking VMOS200, DMOS200, CDMOS200, and CVMOS200 are advanced products designed for telecommunications and power management applications. Each model showcases unique features and technologies that make them stand out in their respective fields.

The VMOS200 is built on the vertical MOSFET technology, allowing for optimized performance in high-power applications. This device excels in switching capabilities and minimizing conduction losses, leading to improved efficiency. The VMOS200 is ideal for use in power amplifiers and high-frequency applications, where reliable performance and thermal stability are crucial. Its rugged design ensures that it can withstand harsh environments, making it a preferred choice for industrial and aerospace applications.

Next, the DMOS200 employs a double-diffused MOSFET technology, which enhances its thermal performance and power handling capabilities. This model is particularly effective in low-voltage applications where efficiency is paramount. The DMOS200 features a low on-resistance characteristic, allowing for reduced energy loss during operation. Its fast switching speed enables high-frequency operation, making it suitable for RF amplifiers and motor drives.

The CDMOS200 introduces a charge-balanced design, optimizing the allocation of charge carriers within the device to minimize heat generation and improve efficiency. This model is tailored for demanding applications in communications where signal integrity and power efficiency are critical. With its high breakdown voltage and robust construction, the CDMOS200 can handle more demanding operational conditions, making it popular in cellular and satellite communication systems.

Lastly, the CVMOS200 combines the advantages of vertical and charge-balanced technologies, offering a versatile solution for a broad range of applications. This hybrid design provides high efficiency, exceptional reliability, and enhanced thermal management. The CVMOS200 is particularly well-suited for switching power supplies and audio amplification. Its compact footprint allows for integration into space-constrained designs while maintaining high performance.

In summary, the Viking series of devices—VMOS200, DMOS200, CDMOS200, and CVMOS200—offer a range of features, technologies, and characteristics tailored to meet the demands of modern power electronics and telecommunications. With their robust designs, high efficiency, and adaptability to various applications, these devices are integral components for engineers and designers looking to create cutting-edge technological solutions.