Arrow Plastic Network Card manual High Performance Mosfet for Automotive Systems

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High Performance MOSFET for Automotive Systems

Advanced HPA TrenchMOS technology improves performance and powers automotive innovation

NXP Semiconductors’ High Performance Automotive (HPA) TrenchMOS™ family of MOSFETs has specific features to satisfy the high power requirements of safety and comfort systems and improve system performance throughout the car.

Vehicles contain multiple features that make driving more comfortable, convenient and safer, such as engine management units, catalytic converters, ABS, passenger restraint systems, power assisted steering and electric windows, mirrors and seats. Electric Power Assisted Steering (EPAS) systems, for example, require around 1kW while pump and fan motors draw between 500W and 800W. Other applications, such as electric braking, turbochargers or valve train control, also consume high power with an Integrated Starter Alternator (ISA) requiring <10kW.

Such high power demands mean drawing higher current levels from the standard 14V automotive supply. Power MOSFETs need to provide the large current handling capability in standard, inexpensive discrete packages without the need for large arrays of devices and at minimum heat dissipation, even when operated for long periods.

The HPA TrenchMOS products are extremely rugged with very low on-state resistance and an excellent balance of current handling, low dissipation and cost-effectiveness in industry standard packages, supremely suited to the automotive environment. HPA devices meet today’s electrical power demands and are flexible enough for future automotive innovations. Devices are available in 30V, 40V, 55V, 75V and 100V versions.

An established leader in proven Trench technology, NXP has advanced capabilities to the next level with an innovative stripe configuration for the MOSFET cells that allows smaller cell pitch

–and hence lower on-state resistance - without a corresponding increase in capacitance and gate charge. Consequently, HPA

devices offer faster switching for a given RDSon, leading to an outstanding combination of size, reliability, efficiency and performance that reduces system costs without cutting back on functionality. Devices fabricated using this process are 20% more rugged than previous generations, allowing HPA devices to perform to their maximum potential even in the harshest automotive environments. With enhanced avalanche capability, they are rated for temperatures between -55°C and +175°C and are fully compliant with the AEC Q101 standard stress test qualification for discrete semiconductors.

As space efficiency becomes an important factor in system design, the HPA family maximises the performance available from small footprints.

Devices are available in a wide range of compact, standard packages including TO220, D²PAK, LFPAK and DPAK as well as Known Good Die (KGD) with the added benefit of even lower RDSon values.

Features

ULow RDSon

URated for -55°C to +175°C

UAEC Q101 compliant

UTO220, D²PAK, LFPAK, DPAK or KGD

Applications

UElectric power assisted steering

UIntegrated starter alternator

UElectric turbochargers

UCatalytic converter heaters

UWater, oil and fuel pump motors

UWindscreen wiper, seat, window and mirror motors

UEngine management

UDriving motors for power roofs and door locks

USeat belt pre-tensioning

UFuel pumps

NXP High

Performance MOSFETs for Automotive Systems Brochure available!

For further information, including the High Performance MOSFETs

for Automotive Systems Brochure, please complete the reply slip or visit http://www.arrowne.com/innov/in216/f_1424.shtml

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