CY62158EV30 MoBL®
Document #: 38-05578 Rev. *D Page 3 of 11
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature..................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground Potential–0.3V to VCC(max) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[5, 6].........................–0.3V to VCC(max) + 0.3V
DC Input Voltage[5, 6]..................... –0.3V to VCC(max) + 0.3V
Output Current into Outputs (LOW).............................20 mA
Static Discharge Voltage............................................>2001V
(MIL-STD-883, Method 3015)
Latch up Current......................................................>200 mA
Operating Range
Product Range
Ambient
Temperature
(TA)
VCC[7]
CY62158EV30LL Industrial –40°C to +85°C 2.2V – 3.6V
Electrical Characteristics (Over the Operating Range)
Parameter Description Test Conditions 45 ns Unit
Min Typ[4] Max
VOH Output HIGH Voltage IOH = –0.1 mA 2.0 V
IOH = –1.0 mA, VCC > 2.70V 2.4 V
VOL Output LOW Voltage IOL = 0.1 mA 0.4 V
IOL = 2.1 mA, VCC > 2.70V 0.4 V
VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3V V
VCC = 2.7V to 3.6V 2.2 VCC + 0.3V V
VIIL Input LOW Voltage VCC = 2.2V to 2.7V –0.3 0.6 V
VCC = 2.7V to 3.6V –0.3 0.8 V
IIX Input Leakage Current GND < VI < VCC –1 +1 µA
IOZ Output Leakage Current GND < VO < VCC, Output Disabled –1 +1 µA
ICC VCC Operating Supply Current f = fmax = 1/tRC VCC = VCCmax
IOUT = 0 mA
CMOS levels
18 25 mA
f = 1 MHz 1.8 3 mA
ISB1 Automatic CE
Power down Current —
CMOS Inputs
CE1 > VCC – 0.2V, CE2 < 0.2V
VIN > VCC – 0.2V, VIN < 0.2V)
f = fmax (Address and Data Only),
f = 0 (OE and WE), VCC = 3.60V
28µA
ISB2[8] Automatic CE
Power down Current —
CMOS Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
28µA
Capacitance[9]
Parameter Description Test Conditions Max Unit
CIN Input Capacitance TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10 pF
COUT Output Capacitance 10 pF
Notes
5. VIL(min) = –2.0V for pulse durations less than 20 ns.
6. VIH(max)= VCC + 0.75V for pulse duration less than 20 ns.
7. Full device AC operation assumes a 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
8. Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
9. Tested initially and after any design or process changes that may affect these parameters.
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