CY62158EV30 MoBL

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

–55°C to +125°C

Supply Voltage to Ground Potential –0.3V to VCC(max) + 0.3V

DC Voltage Applied to Outputs

 

 

 

in High-Z State[5, 6]

–0.3V to V

CC(max)

+ 0.3V

DC Input Voltage[5, 6]

 

 

–0.3V to V

CC(max)

+ 0.3V

 

 

 

Electrical Characteristics (Over the Operating Range)

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

 

>2001V

(MIL-STD-883, Method 3015)

 

 

Latch up Current

 

 

>200 mA

Operating Range

 

 

 

 

 

 

Product

Range

Ambient

VCC[7]

Temperature

 

 

(TA)

 

CY62158EV30LL

Industrial

–40°C to +85°C

2.2V – 3.6V

 

 

 

 

Parameter

Description

 

 

 

Test Conditions

 

45 ns

 

Unit

 

 

 

 

 

 

 

 

 

Min

Typ[4]

Max

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

 

IOH = –0.1 mA

 

2.0

 

 

V

 

 

 

IOH = –1.0 mA, VCC > 2.70V

2.4

 

 

V

VOL

Output LOW Voltage

IOL = 0.1 mA

 

 

 

0.4

V

 

 

 

IOL = 2.1 mA, VCC > 2.70V

 

 

0.4

V

VIH

Input HIGH Voltage

 

VCC = 2.2V to 2.7V

1.8

 

VCC + 0.3V

V

 

 

 

VCC = 2.7V to 3.6V

2.2

 

VCC + 0.3V

V

VIIL

Input LOW Voltage

 

VCC = 2.2V to 2.7V

–0.3

 

0.6

V

 

 

 

VCC = 2.7V to 3.6V

–0.3

 

0.8

V

IIX

Input Leakage Current

GND < VI < VCC

 

–1

 

+1

A

IOZ

Output Leakage Current

GND < VO < VCC, Output Disabled

–1

 

+1

A

ICC

VCC Operating Supply Current

f = fmax = 1/tRC

VCC = VCCmax

 

18

25

mA

 

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

f = 1 MHz

 

 

1.8

3

mA

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

ISB1

Automatic CE

 

 

1 > VCC – 0.2V, CE2 < 0.2V

 

2

8

A

 

CE

 

 

Power down Current —

 

VIN > VCC

– 0.2V, VIN < 0.2V)

 

 

 

 

 

CMOS Inputs

 

f = fmax

(Address and Data Only),

 

 

 

 

 

 

f = 0 (OE and WE), VCC = 3.60V

 

 

 

 

 

 

 

 

 

 

 

ISB2[8]

Automatic CE

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

2

8

A

 

CE

 

 

Power down Current —

 

VIN > VCC

– 0.2V or VIN < 0.2V,

 

 

 

 

 

CMOS Inputs

 

f = 0, VCC

= 3.60V

 

 

 

 

Capacitance[9]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ)

 

 

COUT

Output Capacitance

10

pF

Notes

5.VIL(min) = –2.0V for pulse durations less than 20 ns.

6.VIH(max)= VCC + 0.75V for pulse duration less than 20 ns.

7.Full device AC operation assumes a 100 s ramp time from 0 to VCC(min) and 200 s wait time after VCC stabilization.

8.Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

9.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05578 Rev. *D

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Cypress CY62158EV30 manual Maximum Ratings, Electrical Characteristics Over the Operating Range, Capacitance9