CY7C1019D
1-Mbit (128K x 8) Static RAM
Features
•Pin- and
•High speed
—tAA = 10 ns
•Low active power
—ICC = 80 mA @ 10 ns
•Low CMOS standby power
—ISB2 = 3 mA
•2.0V Data retention
•Automatic
•CMOS for optimum speed/power
•Center power/ground pinout
•Easy memory expansion with CE and OE options
•Functionally equivalent to CY7C1019B
•Available in
Functional Description [1]
The CY7C1019D is a
•Deselected (CE HIGH)
•Outputs are disabled (OE HIGH)
•When the write operation is active (CE LOW, and WE LOW).
Write to the device by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A16).
Read from the device by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appears on the IO pins.
Logic Block Diagram
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| INPUT BUFFER |
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| IO0 | |||||
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| IO1 |
A0 |
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A1 | DECODERROW |
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| SENSEAMPS | IO2 |
A7 |
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| IO5 | ||
A2 |
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| 128K x 8 |
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A3 |
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| IO3 |
A4 |
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| ARRAY |
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A5 |
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| IO4 | |||
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A6 |
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A8 |
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| IO6 |
CE |
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| POWER | IO7 |
| COLUMN DECODER | |||||||||
WE | DOWN |
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OE |
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| 9 | 10 | 11 | 12 | 13 | 14 | 15 | 16 |
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| A | A | A | A | A A A A |
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Note
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation | • 198 Champion Court • San Jose, CA | • | |
Document #: | Revised February 22, 2007 |
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