CY7C1019D

Pin Configuration

SOJ/TSOPII

Top View

 

 

A0

 

 

1

 

32

 

 

A16

 

 

 

 

 

A1

 

 

2

31

 

 

A15

 

 

 

 

 

A2

 

 

3

30

 

 

A

 

 

 

 

 

A3

 

 

 

 

 

 

 

14

 

 

 

 

4

29

 

 

A

 

 

 

 

 

 

 

 

 

 

5

28

 

13

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

27

 

IO 0

 

 

6

 

 

IO 7

 

 

 

IO 1

 

 

7

26

 

 

IO 6

 

 

 

 

 

25

 

VCC

 

 

8

 

 

V

 

 

 

VSS

 

 

 

 

24

 

 

SS

 

 

9

 

 

VCC

 

 

 

 

 

23

 

IO 2

 

 

10

 

 

IO 5

 

 

 

IO 3

 

 

11

22

 

 

IO 4

 

 

 

 

WE

 

 

 

12

21

 

 

A12

 

 

 

 

 

A4

 

 

13

20

 

 

A11

 

 

 

 

 

A5

 

 

 

14

19

 

 

A10

 

 

 

 

 

 

A6

 

15

18

 

 

A9

 

 

 

 

 

 

 

 

A7

 

 

16

17

 

 

A8

 

 

 

 

 

 

Selection Guide

 

–10 (Industrial)

Unit

Maximum Access Time

10

ns

 

 

 

Maximum Operating Current

80

mA

 

 

 

Maximum Standby Current

3

mA

 

 

 

Document #: 38-05464 Rev. *E

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Cypress CY7C1019D manual Pin Configuration, Selection Guide, Top View, Industrial Unit

CY7C1019D specifications

The Cypress CY7C1019D is a high-performance static random-access memory (SRAM) chip designed for various applications requiring fast and reliable memory solutions. This RAM chip is particularly noted for its high-speed performance, low power consumption, and versatility, making it suitable for a wide range of electronic devices and systems.

One of the main features of the CY7C1019D is its fast access time, which typically ranges from 10 ns to 15 ns. This rapid access time allows for efficient data processing and fast response times in applications such as telecommunications, networking, and consumer electronics. The chip operates at standard voltages of 2.7V to 3.6V, ensuring compatibility with modern low-voltage systems while also reducing power consumption.

Another noteworthy characteristic of the CY7C1019D is its density of 1 Megabit, organized in a 128K x 8 architecture. This configuration provides ample memory space for various data storage needs, whether in embedded systems, automotive applications, or high-speed buffering. The SRAM's structure allows for simultaneous read and write operations, enhancing overall system performance.

The CY7C1019D employs advanced CMOS technology, which contributes to its low power operation. This feature is crucial for battery-powered devices and applications where energy efficiency is a priority. The chip supports a range of operating temperatures, making it suitable for both consumer and industrial applications.

Moreover, the CY7C1019D includes various useful features such as a fast burst mode for high-speed data transfer, and it supports asynchronous data rates, enhancing its adaptability across different platforms. Its simple interface allows for easy integration into existing system architectures.

The package options for the CY7C1019D include both 32-pin and 44-pin flat packages, making it accessible for different PCB layouts and design requirements. This flexibility further contributes to its wide usage in various industries, including automotive, telecommunications, and industrial control systems.

In conclusion, the Cypress CY7C1019D SRAM chip stands out as a reliable, high-speed memory component, ideal for applications demanding quick access and efficient data management. Its combination of speed, low power consumption, and versatility makes it a preferred choice for designers looking to enhance system performance and reliability.