CY7C1019D

Data Retention Characteristics (Over the Operating Range)

Parameter

Description

Conditions

Min

Max

Unit

 

 

 

 

 

 

 

 

VDR

VCC for Data Retention

 

 

 

2.0

 

V

ICCDR

Data Retention Current

VCC = VDR = 2.0V,

 

> VCC – 0.3V,

 

3

mA

CE

 

 

 

VIN > VCC – 0.3V or VIN < 0.3V

 

 

 

tCDR [3]

Chip Deselect to Data Retention Time

 

 

 

0

 

ns

tR [12]

Operation Recovery Time

 

 

 

tRC

 

ns

Data Retention Waveform

 

 

DATA RETENTION MODE

 

VCC

4.5V

VDR > 2V

4.5V

 

tCDR

 

tR

CE

 

 

 

Switching Waveforms

Read Cycle No. 1 (Address Transition Controlled) [13, 14]

tRC

ADDRESS

tAA

tOHA

DATA OUT

PREVIOUS DATA VALID

DATA VALID

Read Cycle No. 2 (OE Controlled) [14, 15]

 

 

ADDRESS

 

 

 

CE

 

tRC

 

 

 

 

 

tACE

 

 

OE

 

 

 

 

tDOE

tHZOE

 

 

tHZCE

 

 

tLZOE

HIGH

DATA OUT

HIGH IMPEDANCE

DATA VALID

IMPEDANCE

 

 

 

 

tLZCE

tPD

 

VCC

tPU

ICC

SUPPLY

50%

 

50%

CURRENT

 

 

ISB

Notes

12.Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.

13.Device is continuously selected. OE, CE = VIL.

14.WE is HIGH for Read cycle.

15.Address valid prior to or coincident with CE transition LOW.

Document #: 38-05464 Rev. *E

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Cypress CY7C1019D Data Retention Characteristics Over the Operating Range, Data Retention Waveform, Switching Waveforms

CY7C1019D specifications

The Cypress CY7C1019D is a high-performance static random-access memory (SRAM) chip designed for various applications requiring fast and reliable memory solutions. This RAM chip is particularly noted for its high-speed performance, low power consumption, and versatility, making it suitable for a wide range of electronic devices and systems.

One of the main features of the CY7C1019D is its fast access time, which typically ranges from 10 ns to 15 ns. This rapid access time allows for efficient data processing and fast response times in applications such as telecommunications, networking, and consumer electronics. The chip operates at standard voltages of 2.7V to 3.6V, ensuring compatibility with modern low-voltage systems while also reducing power consumption.

Another noteworthy characteristic of the CY7C1019D is its density of 1 Megabit, organized in a 128K x 8 architecture. This configuration provides ample memory space for various data storage needs, whether in embedded systems, automotive applications, or high-speed buffering. The SRAM's structure allows for simultaneous read and write operations, enhancing overall system performance.

The CY7C1019D employs advanced CMOS technology, which contributes to its low power operation. This feature is crucial for battery-powered devices and applications where energy efficiency is a priority. The chip supports a range of operating temperatures, making it suitable for both consumer and industrial applications.

Moreover, the CY7C1019D includes various useful features such as a fast burst mode for high-speed data transfer, and it supports asynchronous data rates, enhancing its adaptability across different platforms. Its simple interface allows for easy integration into existing system architectures.

The package options for the CY7C1019D include both 32-pin and 44-pin flat packages, making it accessible for different PCB layouts and design requirements. This flexibility further contributes to its wide usage in various industries, including automotive, telecommunications, and industrial control systems.

In conclusion, the Cypress CY7C1019D SRAM chip stands out as a reliable, high-speed memory component, ideal for applications demanding quick access and efficient data management. Its combination of speed, low power consumption, and versatility makes it a preferred choice for designers looking to enhance system performance and reliability.