CY7C1019D
Data Retention Characteristics (Over the Operating Range)
Parameter | Description | Conditions | Min | Max | Unit | ||
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|
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|
|
|
|
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VDR | VCC for Data Retention |
|
|
| 2.0 |
| V |
ICCDR | Data Retention Current | VCC = VDR = 2.0V, |
| > VCC – 0.3V, |
| 3 | mA |
CE |
| ||||||
|
| VIN > VCC – 0.3V or VIN < 0.3V |
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|
| ||
tCDR [3] | Chip Deselect to Data Retention Time |
|
|
| 0 |
| ns |
tR [12] | Operation Recovery Time |
|
|
| tRC |
| ns |
Data Retention Waveform
|
| DATA RETENTION MODE |
|
VCC | 4.5V | VDR > 2V | 4.5V |
| tCDR |
| tR |
CE |
|
|
|
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled) [13, 14]
tRC
ADDRESS
tAA
tOHA
DATA OUT | PREVIOUS DATA VALID |
DATA VALID
Read Cycle No. 2 (OE Controlled) [14, 15] |
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| |
ADDRESS |
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|
|
CE |
| tRC |
|
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| |
| tACE |
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OE |
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|
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| tDOE | tHZOE |
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| tHZCE |
| |
| tLZOE | HIGH | |
DATA OUT | HIGH IMPEDANCE | DATA VALID | IMPEDANCE |
|
|
| |
| tLZCE | tPD |
|
VCC | tPU | ICC | |
SUPPLY | 50% |
| 50% |
CURRENT |
|
| ISB |
Notes
12.Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.
13.Device is continuously selected. OE, CE = VIL.
14.WE is HIGH for Read cycle.
15.Address valid prior to or coincident with CE transition LOW.
Document #: | Page 6 of 11 |
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