CY7C1217H

Logic Block Diagram

 

 

 

 

 

 

A0, A1, A

 

ADDRESS

 

 

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

ADV

 

BURST

Q1

 

 

 

 

CLK

 

COUNTER

 

 

 

 

 

 

 

AND LOGIC

 

 

 

 

 

 

CLR

Q0

 

 

 

 

 

 

 

 

 

 

 

ADSC

 

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

 

 

DQD, DQPD

DQD, DQPD

 

 

 

 

BWD

 

BYTE

 

 

 

 

 

BYTE

 

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

DQC, DQPC

DQC, DQPC

 

 

 

 

BWC

 

BYTE

 

 

 

 

 

BYTE

 

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

WRITE REGISTER

MEMORY

 

OUTPUT

DQs

 

 

 

SENSE

 

 

 

 

ARRAY

BUFFERS

DQPA

 

 

 

DQB, DQPB

AMPS

 

 

DQB, DQPB

 

 

DQPB

BWB

 

BYTE

 

 

 

 

 

 

 

 

DQPC

 

BYTE

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQPD

 

 

WRITE REGISTER

 

 

 

 

 

 

 

DQA, DQPA

 

 

 

 

BWA

 

DQA, DQPA

BYTE

 

 

 

 

 

BYTE

WRITE REGISTER

 

 

 

 

BWE

 

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

GW

 

 

 

 

 

INPUT

 

CE1

 

ENABLE

 

 

 

REGISTERS

 

 

 

 

 

 

 

 

REGISTER

 

 

 

 

 

CE2

 

 

 

 

 

 

 

 

 

 

 

 

 

CE3

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

 

Document #: 38-05670 Rev. *B

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Cypress CY7C1217H manual Logic Block Diagram

CY7C1217H specifications

The Cypress CY7C1217H is a high-performance synchronous static random-access memory (SRAM) device that offers an array of features making it suitable for a diverse range of applications. With a configuration of 1 Meg x 16 bits, this component is well-suited for use in high-speed data processing systems, instrumentation, networking, and other applications that demand rapid-read and write cycles.

One of the standout features of the CY7C1217H is its high-speed operation. It supports a clock frequency of up to 167 MHz, making it ideal for systems that require fast data access and transfer rates. This high-speed capability is complemented by a low-power consumption profile, which is critical for battery-operated devices and energy-efficient applications. The part operates on a supply voltage of 1.65V to 1.95V, allowing for compatibility with modern low-voltage digital systems.

The device utilizes a dual-port architecture, enabling simultaneous access from multiple processors or data buses. This dual-port design significantly improves performance by allowing multiple data transactions to occur simultaneously, thus increasing overall system throughput. Additionally, the CY7C1217H features an asynchronous read and write capability, allowing for flexible operation in various system configurations.

In terms of memory organization, the CY7C1217H employs a multiplexed address input design, which helps optimize pin count and leads to more efficient PCB layouts. The use of a XY address decoding scheme allows for straightforward integration into existing systems while maintaining high performance.

Another notable characteristic of this SRAM is its reliability and durability. The device is built using Cypress's advanced trench technology, providing inherent robustness against environmental stress factors. This ensures a longer lifespan and improved performance consistency over time.

Furthermore, the CY7C1217H supports a range of operating temperatures, making it suitable for both commercial and industrial applications. Whether used in consumer electronics or critical industrial control systems, this SRAM's versatility ensures it can meet diverse design requirements.

In summary, the Cypress CY7C1217H synchronous SRAM combines high-speed performance, low power consumption, and dual-port capabilities with robust design characteristics. Its versatility and reliability make it an excellent choice for engineers looking to enhance their high-performance applications across various sectors.