CY7C1217H

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Descriptions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

I/O

 

 

 

Description

 

 

 

 

 

 

 

A0, A1, A

Input-

Address Inputs used to select one of the 32K address locations. Sampled at the rising

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A[1:0] feed the 2-bit counter.

 

 

 

 

 

A,

 

 

 

B

Input-

Byte Write Select Inputs, active LOW. Qualified with

 

to conduct Byte Writes to the

 

 

BW

BW

BWE

 

 

BWC, BWD

Synchronous

SRAM. Sampled on the rising edge of CLK.

 

 

 

 

 

 

 

 

 

 

 

Input-

Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a

 

 

GW

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

global Write is conducted (ALL bytes are written, regardless of the values on BW[A:D] and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BWE).

 

 

 

 

 

 

 

 

 

 

 

Input-

Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must

 

 

BWE

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

be asserted LOW to conduct a Byte Write.

 

 

CLK

Input-Clock

Clock Input. Used to capture all synchronous inputs to the device. Also used to increment

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

the burst counter when ADV is asserted LOW, during a burst operation.

 

 

 

1

 

 

 

Input-

Chip Enable

1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

sampled only when a new external address is loaded.

 

 

CE2

Input-

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

with CE1 and CE3 to select/deselect the device. CE2 is sampled only when a new external

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

address is loaded.

 

 

 

3

 

 

 

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

with CE1 and CE2 to select/deselect the device. CE3 is sampled only when a new external

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

address is loaded.

 

 

 

 

 

 

 

 

Input-

Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins.

 

 

OE

 

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

and act as input data pins. OE is masked during the first clock of a Read cycle when emerging

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

from a deselected state.

 

 

 

 

 

 

 

 

 

 

Input-

Advance Input signal, sampled on the rising edge of CLK. When asserted, it automatically

 

 

ADV

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

increments the address in a burst cycle.

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When

 

 

ADSP

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW, addresses presented to the device are captured in the address registers.

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

is recognized.

ASDP

is ignored when CE1 is deasserted HIGH

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When

 

 

ADSC

 

 

 

 

 

 

 

 

 

 

 

 

 

Synchronous

asserted LOW, addresses presented to the device are captured in the address registers.

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

is recognized.

 

 

ZZ

Input-

ZZ “Sleep” Input, active HIGH. When asserted HIGH places the device in a non-time-critical

 

 

 

 

 

 

 

 

 

 

 

 

 

Asynchronous

“sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

or left floating. ZZ pin has an internal pull-down.

 

 

DQs

I/O-

Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered

 

 

DQPA, DQPB

Synchronous

by the rising edge of CLK. As outputs, they deliver the data contained in the memory location

 

 

DQPC, DQPD

 

 

 

specified by the addresses presented during the previous clock rise of the Read cycle. The

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

outputs. When HIGH, DQs and DQP[A:D] are placed in a tri-state condition.

 

 

VDD

Power Supply

Power supply inputs to the core of the device.

 

 

VSS

Ground

Ground for the core of the device.

 

 

VDDQ

I/O Power Supply

Power supply for the I/O circuitry.

 

 

VSSQ

I/O Ground

Ground for the I/O circuitry.

 

 

MODE

Input-

Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or

 

 

 

 

 

 

 

 

 

 

 

 

 

Static

left floating selects interleaved burst sequence. This is a strap pin and should remain static

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

during device operation. Mode Pin has an internal pull-up.

 

 

NC

 

 

 

No Connects. Not Internally connected to the die. 2M, 4M, 9M, 18M, 72M, 144M, 288M,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

576M and 1G are address expansion pins and are not internally connected to the die.

Document #: 38-05670 Rev. *B

 

 

 

 

 

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Cypress CY7C1217H manual Pin Descriptions
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CY7C1217H specifications

The Cypress CY7C1217H is a high-performance synchronous static random-access memory (SRAM) device that offers an array of features making it suitable for a diverse range of applications. With a configuration of 1 Meg x 16 bits, this component is well-suited for use in high-speed data processing systems, instrumentation, networking, and other applications that demand rapid-read and write cycles.

One of the standout features of the CY7C1217H is its high-speed operation. It supports a clock frequency of up to 167 MHz, making it ideal for systems that require fast data access and transfer rates. This high-speed capability is complemented by a low-power consumption profile, which is critical for battery-operated devices and energy-efficient applications. The part operates on a supply voltage of 1.65V to 1.95V, allowing for compatibility with modern low-voltage digital systems.

The device utilizes a dual-port architecture, enabling simultaneous access from multiple processors or data buses. This dual-port design significantly improves performance by allowing multiple data transactions to occur simultaneously, thus increasing overall system throughput. Additionally, the CY7C1217H features an asynchronous read and write capability, allowing for flexible operation in various system configurations.

In terms of memory organization, the CY7C1217H employs a multiplexed address input design, which helps optimize pin count and leads to more efficient PCB layouts. The use of a XY address decoding scheme allows for straightforward integration into existing systems while maintaining high performance.

Another notable characteristic of this SRAM is its reliability and durability. The device is built using Cypress's advanced trench technology, providing inherent robustness against environmental stress factors. This ensures a longer lifespan and improved performance consistency over time.

Furthermore, the CY7C1217H supports a range of operating temperatures, making it suitable for both commercial and industrial applications. Whether used in consumer electronics or critical industrial control systems, this SRAM's versatility ensures it can meet diverse design requirements.

In summary, the Cypress CY7C1217H synchronous SRAM combines high-speed performance, low power consumption, and dual-port capabilities with robust design characteristics. Its versatility and reliability make it an excellent choice for engineers looking to enhance their high-performance applications across various sectors.
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