Cypress CY7C1217H manual Maximum Ratings, Operating Range, Ambient

CY7C1217H

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature		–65°C to + 150°C
Ambient Temperature with
Power Applied		–55°C to + 125°C
Supply Voltage on VDD Relative to GND		–0.5V to + 4.6V
Supply Voltage on VDDQ Relative to GND		–0.5V to + VDD
DC Voltage Applied to Outputs
in Tri-State	–0.5V to VDDQ + 0.5V

Electrical Characteristics Over the Operating Range [7, 8]

DC Input Voltage	...................................				–0.5V to VDD + 0.5V
Current into Outputs (LOW)						20 mA
Static Discharge Voltage						>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current						>200 mA
Operating Range
	Ambient			]	VDD	VDDQ
Range	Temperature
Commercial	0°C to +70°C				3.3V	2.5V –5%
					−5%/+10%	to VDD
Industrial	–40	°		°
			C to +85 C

Parameter		Description	Test Conditions		Min.	Max.	Unit
VDD		Power Supply Voltage			3.135	3.6	V
VDDQ		I/O Supply Voltage	for 3.3V I/O		3.135	VDD	V
			for 2.5V I/O		2.375	2.625	V
VOH		Output HIGH Voltage	for 3.3V I/O, IOH = –4.0 mA		2.4		V
			for 2.5V I/O, IOH = –1.0 mA		2.0		V
VOL		Output LOW Voltage	for 3.3V I/O, IOL = 8.0 mA			0.4	V
			for 2.5V I/O, IOL = 1.0 mA			0.4	V
V	IH	Input HIGH Voltage[7]	for 3.3V I/O		2.0	V + 0.3V	V
						DD
			for 2.5V I/O		1.7	VDD + 0.3V	V
VIL		Input LOW Voltage[7]	for 3.3V I/O		–0.3	0.8	V
			for 2.5V I/O		–0.3	0.7	V
IX		Input Leakage Current	GND ≤ VI ≤ VDDQ		−5	5	∝A
		except ZZ and MODE
		Input Current of MODE	Input = VSS		–30		∝A
			Input = VDD			5	∝A
		Input Current of ZZ	Input = VSS		–5		∝A
			Input = VDD			30	∝A
IOZ		Output Leakage Current	GND ≤ VI ≤ VDDQ, Output Disabled		–5	5	∝A
IDD		VDD Operating Supply	VDD = Max., IOUT = 0 mA,	7.5-ns cycle, 133 MHz		225	mA
		Current	f = fMAX= 1/tCYC
				10-ns cycle, 100 MHz		205	mA
ISB1		Automatic CE	Max. VDD, Device Deselected,	7.5-ns cycle, 133 MHz		90	mA
		Power-Down	VIN ≥ VIH or VIN ≤ VIL, f = fMAX,
				10-ns cycle, 100 MHz		80	mA
		Current—TTL Inputs	inputs switching
ISB2		Automatic CE	Max. VDD, Device Deselected,	All speeds		40	mA
		Power-Down	VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
		Current—CMOS Inputs	f = 0, inputs static
ISB3		Automatic CE	Max. VDD, Device Deselected,	7.5-ns cycle, 133 MHz		75	mA
		Power-Down	VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V,
				10-ns cycle, 100 MHz		65	mA
		Current—CMOS Inputs	f = fMAX, inputs switching
ISB4		Automatic CE	Max. VDD, Device Deselected,	All speeds		45	mA
		Power-Down	VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
		Current—TTL Inputs	f = 0, inputs static

Notes:

7.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

8.TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05670 Rev. *B Page 8 of 16

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