Cypress CY7C1231H manual Pin Definitions, Name, Description, Power supply for the I/O circuitry

Models: CY7C1231H

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Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1231H

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Name

 

I/O

 

 

 

Description

 

 

 

 

 

 

 

 

A0, A1, A

 

Input-

Address Inputs used to select one of the 128K address locations. Sampled at the rising edge of

 

 

 

 

 

 

 

 

 

 

Synchronous

the CLK. A[1:0] are fed to the two-bit burst counter.

 

 

BW

[A:B]

 

Input-

Byte Write Inputs, active LOW. Qualified with

WE

to conduct writes to the SRAM. Sampled on the

 

 

 

 

 

 

 

 

 

 

Synchronous

rising edge of CLK.

 

 

WE

 

 

 

 

 

Input-

Write Enable Input, active LOW. Sampled on the rising edge of CLK if

CEN

is active LOW. This

 

 

 

 

 

 

 

 

 

 

Synchronous

signal must be asserted LOW to initiate a write sequence.

 

 

ADV/LD

 

 

Input-

Advance/Load Input. Used to advance the on-chip address counter or load a new address. When

 

 

 

 

 

 

 

 

 

 

Synchronous

HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address

 

 

 

 

 

 

 

 

 

 

 

can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW

 

 

 

 

 

 

 

 

 

 

 

in order to load a new address.

 

 

CLK

 

Input-Clock

Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with

CEN.

CLK

 

 

 

 

 

 

 

 

 

 

 

is only recognized if CEN is active LOW.

 

 

CE

1

 

 

Input-

Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

 

 

Synchronous

CE2, and CE3 to select/deselect the device.

 

 

CE2

 

Input-

Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE3 to select/deselect the device.

 

 

CE

3

 

 

Input-

Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with

 

 

 

 

 

 

 

 

 

 

Synchronous

CE1 and CE2 to select/deselect the device.

 

 

OE

 

 

 

Input-

Output Enable, asynchronous input, active LOW. Combined with the synchronous logic block

 

 

 

 

 

 

 

 

 

Asynchronous

inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave

 

 

 

 

 

 

 

 

 

 

 

as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked

 

 

 

 

 

 

 

 

 

 

 

during the data portion of a write sequence, during the first clock when emerging from a deselected

 

 

 

 

 

 

 

 

 

 

 

state, when the device has been deselected.

 

 

CEN

 

 

Input-

Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the SRAM.

 

 

 

 

 

 

 

 

 

 

Synchronous

When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not deselect the

 

 

 

 

 

 

 

 

 

 

 

device, CEN can be used to extend the previous cycle when required.

 

 

ZZ

 

Input-

ZZ “sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition

 

 

 

 

 

 

 

 

 

Asynchronous

with data integrity preserved. During normal operation, this pin has to be low or left floating. ZZ pin has

 

 

 

 

 

 

 

 

 

 

 

an internal pull-down.

 

 

DQs

 

I/O-

Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is triggered by

 

 

 

 

 

 

 

 

 

 

Synchronous

the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified

 

 

 

 

 

 

 

 

 

 

 

by address during the clock rise of the read cycle. The direction of the pins is controlled by OE and

 

 

 

 

 

 

 

 

 

 

 

the internal control logic. When

OE

is asserted LOW, the pins can behave as outputs. When HIGH,

 

 

 

 

 

 

 

 

 

 

 

DQs and DQP[A:B] are placed in a tri-state condition. The outputs are automatically tri-stated during

 

 

 

 

 

 

 

 

 

 

 

the data portion of a write sequence, during the first clock when emerging from a deselected state,

 

 

 

 

 

 

 

 

 

 

 

and when the device is deselected, regardless of the state of OE.

 

 

DQP[A:B]

 

I/O-

Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. During write

 

 

 

 

 

 

 

 

 

 

Synchronous

sequences, DQP[A:B] is controlled by BWx correspondingly.

 

 

Mode

 

Input

Mode Input. Selects the burst order of the device. When tied to Gnd selects linear burst sequence. When

 

 

 

 

 

 

 

 

 

 

Strap Pin

tied to VDD or left floating selects interleaved burst sequence.

 

 

VDD

 

Power Supply

Power supply inputs to the core of the device.

 

 

VDDQ

 

I/O Power

Power supply for the I/O circuitry.

 

 

 

 

 

 

 

 

 

 

Supply

 

 

 

 

 

 

 

 

 

 

 

 

VSS

 

Ground

Ground for the device.

 

 

NC

 

No Connects. Not Internally connected to the die. 4M, 9M, 18M, 36M, 72M, 144M, 288M, 576M, and

 

 

 

 

 

 

 

 

 

 

 

1G are address expansion pins and are not internally connected to the die.

 

Document #: 001-00207 Rev. *B

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Cypress CY7C1231H manual Pin Definitions, Name, Description, Byte Write Inputs, active LOW . Qualified with