Cypress CY7C1231H manual Linear Burst Address Table MODE = GND, ZZ Mode Electrical Characteristics

CY7C1231H

Linear Burst Address Table (MODE = GND)

First	Second	Third	Fourth
Address	Address	Address	Address
A1, A0	A1, A0	A1, A0	A1, A0
00	01	10	11
01	10	11	00
10	11	00	01
11	00	01	10

ZZ Mode Electrical Characteristics

Interleaved Burst Sequence

First	Second	Third	Fourth
Address	Address	Address	Address
A1, A0	A1, A0	A1, A0	A1, A0
00	01	10	11
01	00	11	10
10	11	00	01
11	10	01	00

Parameter

Description

Test Conditions

Min.

Max.

Unit

IDDZZ

Sleep mode standby current

ZZ > VDD − 0.2V

40

mA

tZZS

Device operation to ZZ

ZZ > VDD − 0.2V

2tCYC

ns

tZZREC

ZZ recovery time

ZZ < 0.2V

2tCYC

ns

tZZI

ZZ Active to sleep current

This parameter is sampled

2tCYC

ns

tRZZI

ZZ inactive to exit sleep current

This parameter is sampled

0

ns

Truth Table[2, 3, 4, 5, 6, 7, 8]

Address

Operation

Used

CE

1

CE2

CE

3

ZZ

ADV/LD

WE

BWX

OE

CEN

CLK

DQ

Deselect Cycle

None

H

X

X

L

L

X

X

X

L

L->H

Tri-State

Deselect Cycle

None

X

X

H

L

L

X

X

X

L

L->H

Tri-State

Deselect Cycle

None

X

L

X

L

L

X

X

X

L

L->H

Tri-State

Continue Deselect Cycle

None

X

X

X

L

H

X

X

X

L

L->H

Tri-State

READ Cycle (Begin Burst)

External

L

H

L

L

L

H

X

L

L

L->H

Data Out (Q)

READ Cycle (Continue Burst)

Next

X

X

X

L

H

X

X

L

L

L->H

Data Out (Q)

NOP/DUMMY READ (Begin Burst)

External

L

H

L

L

L

H

X

H

L

L->H

Tri-State

DUMMY READ (Continue Burst)

Next

X

X

X

L

H

X

X

H

L

L->H

Tri-State

WRITE Cycle (Begin Burst)

External

L

H

L

L

L

L

L

X

L

L->H

Data In (D)

WRITE Cycle (Continue Burst)

Next

X

X

X

L

H

X

L

X

L

L->H

Data In (D)

NOP/WRITE ABORT (Begin Burst)

None

L

H

L

L

L

L

H

X

L

L->H

Tri-State

WRITE ABORT (Continue Burst)

Next

X

X

X

L

H

X

H

X

L

L->H

Tri-State

IGNORE CLOCK EDGE (Stall)

Current

X

X

X

L

X

X

X

X

H

L->H

–

Sleep MODE

None

X

X

X

H

X

X

X

X

X

X

Tri-State

Truth Table for Read/Write [2, 3]

Function

WE

BW

A

BW

B

Read

H

X

X

Write – No bytes written

L

H

H

Write Byte A – (DQA and DQPA)

L

H

H

Write Byte B – (DQB and DQPB)

L

H

H

Write All Bytes

L

L

L

Notes:

2.X = “Don't Care.” H = Logic HIGH, L = Logic LOW. BWx = 0 signifies at least one Byte Write Select is active, BWx = Valid signifies that the desired byte write selects are asserted, see Truth Table for details.

3.Write is defined by BW[A:B], and WE. See Truth Table for Read/Write.

4.When a write cycle is detected, all I/Os are tri-stated, even during byte writes.

5.The DQs and DQP[A:B] pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.

6.CEN = H, inserts wait states.

7.Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.

8.OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP[A:B] = Tri-state when OE is inactive or when the device is deselected, and DQs and DQP[A:B] = data when OE is active.

Document #: 001-00207 Rev. *B Page 5 of 12

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