CY7C1305BV25

CY7C1307BV25

Maximum Ratings

(Above which the useful life may be impaired.)

Storage Temperature

–65°C to + 150°C

Ambient Temperature with

 

Power Applied

–55°C to + 125°C

Supply Voltage on VDD Relative to GND

–0.5V to + 3.6V

Supply Voltage on VDDQ Relative to GND ..... –0.5V to + VDD

DC Applied to Outputs in High-Z State –0.5V to VDDQ + 0.5V

DC Input Voltage[15]

–0.5V to V + 0.5V

 

DD

Electrical Characteristics Over the Operating Range[17] DC Electrical Characteristics Over the Operating Range

Current into Outputs (LOW)

 

 

 

 

20 mA

Static Discharge Voltage

 

 

 

 

> 2001V

(per MIL-STD-883, Method 3015)

 

 

 

 

Latch-Up Current

 

 

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

 

 

 

 

 

Range

Ambient

V

 

[16]

V

[16]

Temperature (T

DD

 

A)

 

 

 

DDQ

Com’l

0°C to +70°C

2.5 ± 0.1V

1.4V to 1.9V

 

 

 

 

 

 

 

Ind’l

–40°C to +85°C

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

Test Conditions

Min.

Typ.

 

Max.

Unit

VDD

Power Supply Voltage

 

2.4

2.5

 

2.6

V

VDDQ

I/O Supply Voltage

 

1.4

1.5

 

1.9

V

VOH

Output HIGH Voltage

Note 18

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOL

Output LOW Voltage

Note 19

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOH(LOW)

Output HIGH Voltage

IOH = –0.1 mA, Nominal Impedance

VDDQ – 0.2

 

 

VDDQ

V

VOL(LOW)

Output LOW Voltage

IOH = 0.1 mA, Nominal Impedance

VSS

 

 

0.2

V

V

IH

Input HIGH Voltage[15]

 

V + 0.1

 

V

DDQ

+ 0.3

V

 

 

 

REF

 

 

 

 

V

IL

Input LOW Voltage[15, 20]

 

–0.3

 

V

REF

– 0.1

V

 

 

 

 

 

 

 

 

IX

Input Load Current

GND VI VDDQ

–5

 

 

5

A

IOZ

Output Leakage Current

GND VI VDDQ, Output Disabled

–5

 

 

5

A

VREF

Input Reference Voltage[21]

Typical value = 0.75V

0.68

0.75

 

0.95

V

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

 

 

 

400

mA

 

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

ISB1

Automatic

Max. VDD, Both Ports

 

 

 

200

mA

 

 

Power-Down

Deselected,VIN VIH or VIN < VIL

 

 

 

 

 

 

 

 

Current

f = fMAX = 1/tCYC, Inputs Static

 

 

 

 

 

 

AC Input

Requirements Over the Operating Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

Test Conditions

Min.

Typ.

 

Max.

Unit

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

VREF + 0.2

 

V

VIL

Input LOW Voltage

 

VREF – 0.2

V

Thermal Resistance[22]

Parameter

Description

Test Conditions

165 FBGA

Unit

Package

 

 

 

 

 

ΘJA

Thermal Resistance

Test conditions follow standard test methods and proce-

16.7

°C/W

 

(Junction to Ambient)

dures for measuring thermal impedance, per

 

 

 

 

EIA/JESD51.

 

 

ΘJC

Thermal Resistance

2.5

°C/W

 

 

(Junction to Case)

 

 

 

Notes:

 

 

 

 

15.Overshoot: VIH(AC) < VDDQ +0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > –1.5V (Pulse width less than tCYC/2).

16.Power-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

17.All Voltage referenced to Ground.

18.Output are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175<= RQ <= 350.

19.Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175<= RQ <= 350.

20.This spec is for all inputs except C and C Clock. For C and C Clock, VIL(Max.) = VREF – 0.2V.

21.VREF (Min.) = 0.68V or 0.46VDDQ, whichever is larger, VREF (Max.) = 0.95V or 0.54VDDQ, whichever is smaller.

22.Tested initially and after any design or process change that may affect these parameters.

Document #: 38-05630 Rev. *A

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Cypress CY7C1305BV25, CY7C1307BV25 manual Maximum Ratings, Operating Range, Thermal Resistance22

CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.