CY7C1305BV25

CY7C1307BV25

Switching Characteristics Over the Operating Range[23]

Cypress

Consortium

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

167 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Parameter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Description

Min.

Max.

Unit

 

 

 

 

 

 

tPower[24]

 

VCC (typical) to the First Access Read or Write

10

 

∝s

Cycle Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

tKHKH

K Clock and C Clock Cycle Time

6.0

 

ns

tKH

tKHKL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K

and C/C) HIGH

2.4

 

ns

tKL

tKLKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Clock (K/K

and C/C) LOW

2.4

 

ns

tKHKH

tKHKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K/K

 

Clock Rise to K/K Clock Rise and C/C to C/C Rise (rising edge

2.7

3.3

ns

 

 

to rising edge)

 

 

 

tKHCH

tKHCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

K/K

 

Clock Rise to C/C Clock Rise (rising edge to rising edge)

0.0

2.0

ns

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSA

tSA

Address Set-up to Clock (K and

K) Rise

0.7

 

ns

tSC

tSC

Control Set-up to Clock (K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

ns

K) Rise (RPS, WPS, BWS0, BWS1)

 

tSD

tSD

D[x:0] Set-up to Clock (K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

ns

K) Rise

 

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHA

tHA

Address Hold after Clock (K and

K) Rise

0.7

 

ns

tHC

tHC

Control Signals Hold

after

Clock (K and

 

 

 

 

 

 

 

 

 

 

 

0.7

 

ns

K) Rise

 

 

 

(RPS, WPS, BWS0, BWS1)

 

 

 

tHD

tHD

D[x:0] Hold after Clock (K and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

ns

K) Rise

 

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

tCHQV

C/C

Clock Rise (or K/K

in single clock mode) to Data Valid[25]

 

2.5

ns

tDOH

tCHQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock Rise (Active to Active)

1.2

 

ns

Data Output Hold after Output C/C

 

t

t

Clock (C and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.5

ns

C) rise to High-Z (Active to High-Z)[25, 26]

 

CHZ

CHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCLZ

tCLZ

Clock (C and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.2

 

ns

C) rise to Low-Z[25, 26]

 

Notes:

23.Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V,VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads.

24.This part has a voltage regulator that steps down the voltage internally; tPower is the time power needs to be supplied above VDD minimum initially before a Read or Write operation can be initiated.

25.At any given voltage and temperature tCHZ is less than tCLZ and, tCHZ less than tCO.

26.tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.

Document #: 38-05630 Rev. *A

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Cypress CY7C1305BV25, CY7C1307BV25 manual Switching Characteristics Over the Operating Range23, Cycle Time
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CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.
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