Logic Block Diagram CY7C1305BV25, Selection Guide

CY7C1305BV25

CY7C1307BV25

Logic Block Diagram (CY7C1305BV25)

D[17:0]

A[17:0] 18

Address Register

CLK

Gen.

Write Write Write Write

Reg Reg Reg Reg

Write Add. Decode	256Kx18 Array	256Kx18 Array	256Kx18 Array	256Kx18 Array
		Read Data Reg.
			72

Read Add. Decode

Address

Control

Logic

18 A(17:0)

RPS

Vref

WPS

BWS[0:1]

Control

Logic

Reg.	Reg.
		18

Reg.

18 Q[17:0]

Logic Block Diagram (CY7C1307BV25)

D[35:0]

A(16:0) 17

Address Register

CLK

Gen.

Write Write Write Write

Reg Reg Reg Reg

Decode	128K x	128K x	128K x	128K x
Write Add.	36 Array	36 Array	36 Array	36 Array
		Read Data Reg.
			144

Read Add. Decode

Address

Control

Logic

17 A(16:0)

RPS

Vref

WPS

BWS[0:3]

Control

Logic

Reg.	Reg.
		36

Reg.

36 Q[35:0]

Selection Guide

		CY7C1305BV25-167	Unit
		CY7C1307BV25-167	Unit

	Maximum Operating Frequency	167	MHz

	Maximum Operating Current	400	mA

Document #: 38-05630 Rev. *A			Page 2 of 21

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Cypress Logic Block Diagram CY7C1305BV25, Logic Block Diagram CY7C1307BV25, Selection Guide, CY7C1305BV25-167 Unit

CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.

Contents

Functional Description FeaturesConfigurations CY7C1305BV25 1M x CY7C1307BV25 512K x Selection Guide Logic Block Diagram CY7C1305BV25Logic Block Diagram CY7C1307BV25 CY7C1305BV25-167 Unit Pin\Configuration Ball Fbga 13 x 15 x 1.4 mm Pinout CY7C1307BV25 512K x Pin Definitions Introduction Application Example1 Write Cycle Write Cycle Descriptions CY7C1305BV25 2Operation Read Cycle Operation Write Cycle Descriptions CY7C1307BV25 2Are written into the device Operation Document # 38-05630 Rev. *A Ieee 1149.1 Serial Boundary Scan Jtag Sample Z TAP Controller State Diagram11 EXIT2-IR UPDATE-DR UPDATE-IR Parameter Description Min Max Unit TAP Controller Block DiagramParameter Description Test Conditions Min Max Unit Set-up Times Parameter Description Min Max Unit Output Times TAP Timing and Test Conditions14Identification Register Definitions TCK Clock LOW to TDO Valid Register Name Bit Size Scan Register SizesInstruction Codes Instruction Code Description Boundary Scan Order Bit # Bump ID Thermal Resistance22 Maximum RatingsOperating Range Parameter Description Test Conditions Max Unit Capacitance22AC Test Loads and Waveforms Input Capacitance TA = 25C, f = 1 MHz VDD = Switching Characteristics Over the Operating Range23 Cycle Time Switching Waveforms27, 28 NOP Read Write CY7C1307BV25-167BZC CY7C1305BV25-167BZXC Package DiagramOrdering Information CY7C1307BV25-167BZI CY7C1305BV25-167BZXI SYT Issue Date Orig. Description of ChangeDocument History NXR