Write Cycle Descriptions CY7C1307BV25 2 | Cypress CY7C1305BV25

CY7C1305BV25

CY7C1307BV25

Write Cycle Descriptions (CY7C1307BV25)[2, 10]

BWS

0

BWS

1

BWS

2

BWS

3

K

K

Comments

L

L

L

L

L-H

–

During the Data portion of a Write sequence, all four bytes

(D[35:0]) are written into the device.

L

L

L

L

–

L-H

During the Data portion of a Write sequence, all four bytes

(D[35:0]) are written into the device.

L

H

H

H

L-H

–

During the Data portion of a Write sequence, only the lower

byte (D[8:0]) is written into the device. D[35:9] will remain

unaltered.

L

H

H

H

–

L-H

During the Data portion of a Write sequence, only the lower

byte (D[8:0]) is written into the device. D[35:9] will remain

unaltered.

H

L

H

H

L-H

–

During the Data portion of a Write sequence, only the byte

(D[17:9]) is written into the device. D[8:0] and D[35:18] will

remain unaltered.

H

L

H

H

–

L-H

During the Data portion of a Write sequence, only the byte

(D[17:9]) is written into the device. D[8:0] and D[35:18] will

remain unaltered.

H

H

L

H

L-H

–

During the Data portion of a Write sequence, only the byte

(D[26:18]) is written into the device. D[17:0] and D[35:27] will

remain unaltered.

H

H

L

H

–

L-H

During the Data portion of a Write sequence, only the byte

(D[26:18]) is written into the device. D[17:0] and D[35:27] will

remain unaltered.

H

H

H

L

L-H

During the Data portion of a Write sequence, only the byte

(D[35:27]) is written into the device. D[26:0] will remain

unaltered.

H

H

H

L

–

L-H

During the Data portion of a Write sequence, only the byte

(D[35:27]) is written into the device. D[26:0] will remain

unaltered.

H

H

H

H

L-H

–

No data is written into the device during this portion of a Write

operation.

H

H

H

H

–

L-H

No data is written into the device during this portion of a write

operation.

Document #: 38-05630 Rev. *A

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Cypress CY7C1305BV25 manual Write Cycle Descriptions CY7C1307BV25 2, Are written into the device, Operation

CY7C1307BV25, CY7C1305BV25 specifications

Cypress Semiconductor, a leader in embedded memory solutions, includes the CY7C1305BV25 and CY7C1307BV25 in its family of high-performance synchronous dynamic random-access memory (SDRAM) devices. These memory chips are designed for applications that require high-speed data processing and low power consumption, making them ideal for communication systems, networking devices, and other consumer electronics.

The CY7C1305BV25 is a 512K x 16-bit synchronous SRAM, while the CY7C1307BV25 offers a larger capacity of 1M x 16-bit. Both chips operate at a maximum clock frequency of 166 MHz, ensuring rapid data transfer rates and efficient memory operation. This high-speed performance is crucial in applications where quick data retrieval and storage are imperative.

One of the standout features of these devices is their ability to support a wide range of operating voltages, typically from 2.5V to 3.3V. This versatility allows them to be integrated into systems with varying power requirements, enhancing their adaptability for different designs. Additionally, the chips offer a low standby power consumption level, contributing to energy efficiency in battery-operated devices.

Both the CY7C1305BV25 and CY7C1307BV25 utilize a synchronous interface, allowing for coordinated data transfer with the system clock. This synchronization minimizes latency and improves overall system performance. The use of advanced pipelining techniques enables these devices to process multiple read and write commands concurrently, further boosting throughput.

In terms of reliability and durability, Cypress ensures that these memory chips comply with stringent industry standards. They are designed to withstand a wide temperature range, making them suitable for operation in diverse environments. The robust design includes features that mitigate the risk of data corruption and enhance data integrity, which is a vital consideration in mission-critical applications.

Overall, the CY7C1305BV25 and CY7C1307BV25 represent Cypress Semiconductor's commitment to delivering high-quality, high-performance memory solutions that meet the demanding requirements of modern electronics. Their impressive features, combined with a focus on low power consumption and reliability, make them a preferred choice for engineers and developers aiming to create the next generation of innovative products.

Contents

Features ConfigurationsFunctional Description CY7C1305BV25 1M x CY7C1307BV25 512K x Logic Block Diagram CY7C1305BV25 Logic Block Diagram CY7C1307BV25Selection Guide CY7C1305BV25-167 Unit Pin\Configuration Ball Fbga 13 x 15 x 1.4 mm Pinout CY7C1307BV25 512K x Pin Definitions Introduction Application Example1 Write Cycle Descriptions CY7C1305BV25 2 OperationWrite Cycle Read Cycle Write Cycle Descriptions CY7C1307BV25 2 Are written into the deviceOperation Operation Document # 38-05630 Rev. *A Ieee 1149.1 Serial Boundary Scan Jtag Sample Z TAP Controller State Diagram11 EXIT2-IR UPDATE-DR UPDATE-IR TAP Controller Block Diagram Parameter Description Test Conditions Min Max UnitParameter Description Min Max Unit Set-up Times TAP Timing and Test Conditions14 Identification Register DefinitionsParameter Description Min Max Unit Output Times TCK Clock LOW to TDO Valid Scan Register Sizes Instruction CodesRegister Name Bit Size Instruction Code Description Boundary Scan Order Bit # Bump ID Thermal Resistance22 Maximum RatingsOperating Range Capacitance22 AC Test Loads and WaveformsParameter Description Test Conditions Max Unit Input Capacitance TA = 25C, f = 1 MHz VDD = Switching Characteristics Over the Operating Range23 Cycle Time Switching Waveforms27, 28 NOP Read Write Package Diagram Ordering InformationCY7C1307BV25-167BZC CY7C1305BV25-167BZXC CY7C1307BV25-167BZI CY7C1305BV25-167BZXI Issue Date Orig. Description of Change Document HistorySYT NXR