CY7C1324H

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +4.6V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC Voltage Applied to Outputs

 

 

in Tri-State

–0.5V to VDDQ + 0.5V

Electrical Characteristics Over the Operating Range [6, 7]

DC Input Voltage

...................................

–0.5V to VDD + 0.5V

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

> 2001V

(per MIL-STD-883, Method 3015)

 

 

Latch-up Current

 

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

Ambient

 

 

Range

Temperature

VDD

VDDQ

Commercial

0°C to +70°C

3.3V

2.5V –5%

 

 

5%/+10%

to VDD

Industrial

–40°C to +85°C

Parameter

Description

Test Conditions

Min.

Max.

Unit

VDD

Power Supply Voltage

 

 

3.135

3.6

V

VDDQ

I/O Supply Voltage

for 3.3V I/O

 

3.135

VDD

V

 

 

for 2.5V I/O

 

2.375

2.625

V

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

for 3.3V I/O, IOH = –4.0 mA

 

2.4

 

V

 

 

for 2.5V I/O, IOH = –1.0 mA

 

2.0

 

 

VOL

Output LOW Voltage

for 3.3V I/O, IOL = 8.0 mA

 

 

0.4

V

 

 

for 2.5V I/O, IOL = 1.0 mA

 

 

0.4

 

VIH

Input HIGH Voltage

for 3.3V I/O

 

2.0

VDD + 0.3V

V

 

 

for 2.5V I/O

 

1.7

VDD + 0.3V

 

VIL

Input LOW Voltage[6]

for 3.3V I/O

 

–0.3

0.8

V

 

 

for 2.5V I/O

 

–0.3

0.7

 

 

 

 

 

 

 

 

IX

Input Leakage Current

GND VI VDDQ

 

5

5

A

 

except ZZ and MODE

 

 

 

 

 

 

Input Current of MODE

Input = VSS

 

–30

 

A

 

 

Input = VDD

 

 

5

A

 

Input Current of ZZ

Input = VSS

 

–5

 

A

 

 

Input = VDD

 

 

30

A

IOZ

Output Leakage Current

GND VI VDDQ, Output Disabled

–5

5

A

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

7.5-ns cycle, 133 MHz

 

225

mA

 

Current

f = fMAX= 1/tCYC

 

 

 

 

ISB1

Automatic CE

Max. VDD, Device Deselected,

7.5-ns cycle, 133 MHz

 

90

mA

 

Power-Down

VIN VIH or VIN VIL, f = fMAX,

 

 

 

 

 

Current—TTL Inputs

inputs switching

 

 

 

 

ISB2

Automatic CE

Max. VDD, Device Deselected,

7.5-ns cycle, 133 MHz

 

40

mA

 

Power-Down

VIN VDD – 0.3V or VIN 0.3V,

 

 

 

 

 

Current—CMOS Inputs

f = 0, inputs static

 

 

 

 

ISB3

Automatic CE

Max. VDD, Device Deselected,

7.5-ns cycle, 133 MHz

 

75

mA

 

Power-Down

VIN VDDQ – 0.3V or VIN

 

 

 

 

 

Current—CMOS Inputs

0.3V,

 

 

 

 

 

 

f = fMAX, inputs switching

 

 

 

 

ISB4

Automatic CE

Max. VDD, Device Deselected,

7.5-ns cycle, 133 MHz

 

45

mA

 

Power-Down

VIN VDD – 0.3V or VIN 0.3V,

 

 

 

 

 

Current—TTL Inputs

f = 0, inputs static

 

 

 

 

Notes:

6.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2).

7.TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 001-00208 Rev. *B

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Cypress CY7C1324H manual Maximum Ratings, Operating Range, Ambient Range

CY7C1324H specifications

The Cypress CY7C1324H is a high-performance SRAM (Static Random Access Memory) device that plays a crucial role in various applications requiring fast and efficient data access. This device is part of the CY7C family of SRAM products and stands out for its advanced features, robust performance metrics, and versatility in operation.

One of the most notable features of the CY7C1324H is its 32 megabit (4M x 8) memory capacity, which allows for significant data storage and retrieval capabilities. This memory is organized as a 4M word by 8 bits, making it suitable for a wide range of applications, from automotive to telecommunications and industrial control systems.

The CY7C1324H operates at a speed of 20 nanoseconds, making it an ideal choice for systems that require rapid read and write cycles. The device supports both asynchronous read and write operations, allowing for flexible interfacing with various microcontrollers and digital signal processors. This speed enhances overall system performance, especially when handling time-critical data.

In terms of technologies, the CY7C1324H employs high-speed CMOS (Complementary Metal-Oxide-Semiconductor) technology, which contributes to its low power consumption and high reliability. The device operates at a voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications where energy efficiency is paramount. The integration of advanced CMOS technology also facilitates a higher degree of integration, enabling more compact designs in electronic circuits.

The device features a simple and straightforward interface, with a single enable (E) control pin that allows for easy access to memory contents. Additionally, the CY7C1324H supports both byte-wide and word-wide data accesses, making it highly adaptable for various application requirements.

Another important characteristic of the CY7C1324H is its low pin count, consisting of only 32 pins, which aids in minimizing board space and simplifying design layouts. The packaging comes in a 44-lead Thin Quad Flat Pack (TQFP), further optimizing space usage in compact electronic designs.

In summary, the Cypress CY7C1324H is a versatile, high-speed SRAM solution that offers a combination of large memory capacity, rapid access times, and low power operation. Its robust features make it an excellent choice for a broad spectrum of electronic applications, paving the way for enhanced performance and efficiency in modern electronic systems.