| Pin Definitions |
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| Name | IO |
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| Description |
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| A0, A1, A | Input- |
| Address Inputs used to select one of the 256K address locations. Sampled at the rising edge | ||||||||||||||||||
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| Synchronous |
| of the CLK. A[1:0] are fed to the |
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| [A:B] | Input- |
| Byte Write Inputs, Active LOW. Qualified with |
| to conduct writes to the SRAM. Sampled on | |||||||||||||
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| BW | WE | ||||||||||||||||||||
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| Synchronous |
| the rising edge of CLK. |
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| Input- |
| Write Enable Input, Active LOW. Sampled on the rising edge of CLK if |
| is active LOW. This | ||||||||||
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| WE | CEN | ||||||||||||||||||||
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| Synchronous |
| signal must be asserted LOW to initiate a write sequence. |
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| Input- |
| Advance/Load Input. Used to advance the | ||||||||||||
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| ADV/LD |
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| Synchronous |
| HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new | ||||||||||||
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| address can be loaded into the device for an access. After being deselected, ADV/LD must be | ||||||||||||
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| driven LOW to load a new address. |
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| CLK |
| Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with |
| CLK | |||||||||||||||||
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| CEN. | |||||||||||||||||||||
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| is only recognized if CEN is active LOW. |
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| 1 |
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| Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||||||||
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| CE | |||||||||||||||||||||
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| Synchronous |
| CE2, and CE3 to select/deselect the device. |
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| CE2 | Input- |
| Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||||||||||
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| Synchronous |
| CE1 and CE3 to select/deselect the device. |
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| 3 |
| Input- |
| Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with | ||||||||||||||||
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| CE | |||||||||||||||||||||
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| Synchronous |
| CE1 and CE2 to select/deselect the device. |
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| Input- |
| Output Enable, asynchronous input, Active LOW. Combined with the synchronous logic block | |||||||||||||||
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| OE | |||||||||||||||||||||
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| Asynchronous |
| inside the device to control the direction of the IO pins. When LOW, the IO pins are allowed to | ||||||||||||
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| behave as outputs. When deasserted HIGH, IO pins are | OE |
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| is masked during the data portion of a write sequence, during the first clock when emerging from | ||||||||||||
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| a deselected state, when the device has been deselected. |
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| Input- |
| Clock Enable Input, Active LOW. When asserted LOW the Clock signal is recognized by the | ||||||||||||||
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| CEN | |||||||||||||||||||||
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| Synchronous |
| SRAM. When deasserted HIGH the Clock signal is masked. While deasserting CEN does not | ||||||||||||
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| deselect the device, CEN can be used to extend the previous cycle when required. | ||||||||||||
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| ZZ | Input- |
| ZZ “sleep” Input. This active HIGH input places the device in a | ||||||||||||||||||
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| Asynchronous |
| with data integrity preserved. During normal operation, this pin has to be low or left floating. ZZ pin | ||||||||||||
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| has an internal pull down. |
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| DQs | IO- |
| Bidirectional Data IO Lines. As inputs, they feed into an | ||||||||||||||||||
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| Synchronous |
| the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified | ||||||||||||
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| by address during the clock rise of the read cycle. The direction of the pins is controlled by OE and | ||||||||||||
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| the internal control logic. When | OE | is asserted LOW, the pins can behave as outputs. When HIGH, | ||||||||||
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| DQs and DQP[A:B] are placed in a | ||||||||||||
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| the data portion of a write sequence, during the first clock when emerging from a deselected state, | ||||||||||||
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| and when the device is deselected, regardless of the state of OE. |
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| DQP[A:B] | IO- |
| Bidirectional Data Parity IO Lines. Functionally, these signals are identical to DQs. During write | ||||||||||||||||||
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| Synchronous |
| sequences, DQP[A:B] is controlled by BWx correspondingly. |
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| MODE | Input |
| MODE Input. Selects the burst order of the device. |
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| Strap Pin |
| When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects interleaved | ||||||||||||
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| burst sequence. |
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| VDD | Power Supply |
| Power supply inputs to the core of the device. |
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| VDDQ | IO Power |
| Power supply for the IO circuitry. |
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| Supply |
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| VSS | Ground |
| Ground for the device. |
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| NC,NC/9M, | – |
| No Connects. Not internally connected to the die. NC/9M, NC/18M, NC/72M, NC/144M, NC/288M, | ||||||||||||||||||
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| NC/18M, |
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| are address expansion pins are not internally connected to the die. |
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| NC/36M |
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| NC/72M, |
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| NC/144M, |
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| NC/288M, |
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Document #: |
| Page 3 of 13 |
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