Cypress CY7C1353G Partial Truth Table for Read/Write

CY7C1353G

Document #: 38-05515 Rev. *E Page 6 of 13

Partial Truth Table for Read/Write[2, 3, 9]

Function WE BWABWB

Read HXX

Write – No bytes written L H H

Write Byte A – (DQA and DQPA)LLH

Write Byte B – (DQB and DQPB)LHL

Write All Bytes L L L

Note:

9. Table only lists a partial listing of the byte write combinations. Any combination of BW[A:D] is valid. Appropriate write is based on which byte write is active.

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Contents

Main 4-Mbit (256K x 18) Flow-through SRAM wi t h N o BL Ar CY7C1353G CY7C1353G Pin Definitions Functional Overview CY7C1353G Linear Burst Address Table (MODE = GND) Interleaved Burst Address Table (MODE = Floating or VDD) ZZ Mode Electrical Characteristics Truth Table Partial Truth Table for Read/Write CY7C1353G Maximum Ratings Operating Range Electrical Characteristics Over the Operating Range [10,11] Capacitance Thermal Resistance AC Test Loads and Waveforms Switching Characteristics Page Page Ordering Information Package Diagrams A CY7C1353G Document History Page