CY7C1399B

Electrical Characteristics Over the Operating Range (continued)

 

 

 

 

 

 

 

 

 

 

1399B-15

1399B-20

 

 

 

 

 

 

 

 

 

 

 

Parameter

Description

 

Test Conditions

 

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

VCC = Min., IOH = –2.0 mA

 

2.4

 

2.4

 

V

VOL

Output LOW Voltage

VCC = Min., IOL = 4.0 mA

 

 

0.4

 

0.4

V

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

2.2

VCC

2.2

VCC

V

 

 

 

 

 

 

 

 

 

 

 

+0.3V

 

+0.3V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

–0.3

0.8

–0.3

0.8

V

IIX

Input Load Current

 

 

 

 

 

 

 

 

–1

+1

–1

+1

A

IOZ

Output Leakage Current

GND VI VCC,

 

–5

+5

–5

+5

A

 

 

Output Disabled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOS

Output Short Circuit

VCC = Max., VOUT = GND

 

 

–300

 

–300

mA

 

Current[2]

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC

VCC Operating

VCC = Max., IOUT = 0 mA,

 

 

50

 

45

mA

 

Supply Current

f = fMAX = 1/tRC

 

 

 

 

 

 

 

ISB1

Automatic CE Power-Down

Max. VCC,

CE

VIH,

 

 

5

 

5

mA

 

Current — TTL Inputs

VIN

VIH, or VIN VIL,

 

 

 

 

 

 

 

L

 

4

 

4

mA

 

 

f = fMAX

 

 

 

 

 

 

 

ISB2

Automatic CE Power-Down

Max. VCC,

 

 

VCC–0.3V, VIN

 

 

500

 

500

A

CE

 

 

 

 

Current — CMOS Inputs[3]

V

– 0.3V, or V

0.3V,

 

 

 

 

 

 

 

L

 

50

 

50

A

 

 

CC

 

 

 

 

IN

 

 

 

 

WE

VCC–0.3V or WE0.3V,

 

 

 

 

 

 

 

 

f=fMAX

 

 

 

 

 

 

 

Capacitance[4]

Parameter

Description

Test Conditions

Max.

Unit

 

 

 

 

 

CIN: Addresses

Input Capacitance

TA = 25° C, f = 1 MHz, VCC = 3.3V

5

pF

CIN: Controls

 

 

6

pF

COUT

Output Capacitance

 

6

pF

AC Test Loads and Waveforms

R1 317

 

3.3V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.0V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R2

10%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GND

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

351

3 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

JIG AND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

Equivalent to:

THÉ VENIN EQUIVALENT

 

 

 

 

 

 

 

 

 

 

 

 

 

167

 

 

 

 

 

 

 

 

 

 

 

OUTPUT 1.73V

Note:

4.Tested initially and after any design or process changes that may affect these parameters.

ALL INPUT PULSES

90%

 

90%

 

 

 

10%

3 ns

Document #: 38-05071 Rev. *A

Page 3 of 10

Page 3
Image 3
Cypress CY7C1399B manual Capacitance4, AC Test Loads and Waveforms, Parameter Description Test Conditions Max Unit

CY7C1399B specifications

The Cypress CY7C1399B is a high-performance static random-access memory (SRAM) device that belongs to the family of asynchronous CMOS SRAMs. It is designed to deliver superior speed and efficiency, making it ideal for a multitude of applications in various fields, including telecommunications, automotive, and consumer electronics.

One of the key features of the CY7C1399B is its high-speed operation, capable of achieving access times as low as 12 nanoseconds. This allows for rapid data retrieval, which is crucial in applications requiring fast data processing and real-time performance. Moreover, it operates with a single supply voltage of 2.0V to 3.6V, providing flexibility for power-sensitive designs.

The chip comes with a capacity of 16 megabits, which enables it to store substantial amounts of data. Furthermore, it features a burst mode operation that allows for efficient access to multiple consecutive data locations. This capability makes it particularly useful in applications such as video processing, where quick data retrieval is essential.

Another prominent characteristic of the CY7C1399B is its low power consumption. The device boasts both active and standby power modes, which help minimize energy usage, making it suitable for battery-operated devices. This is increasingly becoming a vital factor for consumer electronics, where energy efficiency is a priority.

In terms of interface, the CY7C1399B uses a conventional parallel interface, compatible with a variety of microcontrollers and processors. The device also supports an asynchronous read and write operation, which simplifies integration into existing systems.

The chip is built using advanced 0.18-micron CMOS technology, which not only enhances its performance but also contributes to its reliability and durability. This technology allows the CY7C1399B to achieve high integration density, resulting in a smaller footprint on printed circuit boards (PCBs).

With a combination of high-speed operational characteristics, low power consumption, and substantial data capacity, the Cypress CY7C1399B stands out as an excellent choice for designers seeking efficient memory solutions that can support the demands of modern electronic systems.