CY7C1522AV18, CY7C1529AV18

CY7C1523AV18, CY7C1524AV18

Switching Characteristics (continued)

Over the Operating Range [20, 21]

Cypress

Consortium

 

 

 

 

 

Description

300 MHz

278 MHz

250 MHz

200 MHz

167 MHz

Unit

Parameter

Parameter

 

 

 

 

 

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

tCHQV

C/C

Clock Rise (or K/K in single

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

 

 

 

 

clock mode) to Data Valid

 

 

 

 

 

 

 

 

 

 

 

tDOH

tCHQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

Data Output Hold after Output C/C

 

 

 

 

 

Clock Rise (Active to Active)

 

 

 

 

 

 

 

 

 

 

 

tCCQO

tCHCQV

 

 

Clock Rise to Echo Clock Valid

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

C/C

tCQOH

tCHCQX

 

 

 

 

 

 

 

 

 

 

 

 

Clock

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

Echo Clock Hold after C/C

 

 

 

 

Rise

 

 

 

 

 

 

 

 

 

 

 

tCQD

tCQHQV

Echo Clock High to Data Valid

 

0.27

 

0.27

 

0.30

 

0.35

 

0.40

ns

tCQDOH

tCQHQX

Echo Clock High to Data Invalid

–0.27

–

–0.27

–

–0.30

–

–0.35

–

–0.40

–

ns

tCQH

tCQHCQL

 

 

 

 

 

 

 

 

 

HIGH [24]

1.24

–

1.35

–

1.55

–

1.95

–

2.45

–

ns

Output Clock (CQ/CQ)

tCQHCQH

 

tCQHCQH

 

CQ Clock Rise to

 

 

Clock Rise

1.24

–

1.35

–

1.55

–

1.95

–

2.45

–

ns

 

 

CQ

 

 

 

 

(rising edge to rising edge) [24]

 

 

 

 

 

 

 

 

 

 

 

tCHZ

tCHQZ

 

 

 

 

 

Rise to High-Z

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

Clock (C/C)

 

 

 

 

(Active to High-Z) [25, 26]

 

 

 

 

 

 

 

 

 

 

 

tCLZ

tCHQX1

 

 

 

 

 

Rise to Low-Z [25, 26]

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

Clock (C/C)

DLL Timing

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKC Var

tKC Var

Clock Phase Jitter

–

0.20

–

0.20

–

0.20

–

0.20

–

0.20

ns

tKC lock

tKC lock

DLL Lock Time (K, C)

1024

–

1024

–

1024

–

1024

–

1024

–

Cycles

tKC Reset

tKC Reset

K Static to DLL Reset

30

 

30

 

30

 

30

 

30

 

ns

Notes

24.These parameters are extrapolated from the input timing parameters (tKHKH - 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (tKC Var) is already included in the tKHKH). These parameters are only guaranteed by design and are not tested in production

25.tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms. Transition is measured ± 100 mV from steady-state voltage.

26.At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.

Document #: 001-06981 Rev. *D

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Cypress CY7C1529AV18, CY7C1524AV18, CY7C1522AV18, CY7C1523AV18 manual DLL Timing, Static to DLL Reset
Page 23 Page 25

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.
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