Cypress CY7C1394BV18, CY7C1992BV18, CY7C1393BV18, CY7C1392BV18 manual Document History, Syt, Nxr

CY7C1392BV18, CY7C1992BV18

CY7C1393BV18, CY7C1394BV18

Document History Page

Document Title: CY7C1392BV18/CY7C1992BV18/CY7C1393BV18/CY7C1394BV18, 18-Mbit DDR-II SIO SRAM 2-Word

Burst Architecture

Document Number: 38-05623

Rev.	ECN No.	Submission	Orig, of	Description of Change
		Date	Change
**	252474	See ECN	SYT	New data sheet
*A	325581	See ECN	SYT	Removed CY7C1394BV18 from the title
				Included 300-MHz Speed Bin
				Added Industrial Temperature Grade
				Replaced TBDs for IDD and ISB1 specs
				Replaced the TBDs on the Thermal Characteristics Table to ΘJA = 28.51°C/W and ΘJC
				= 5.91°C/W
				Replaced TBDs in the Capacitance Table for the 165 FBGA Package
				Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
				(13 x 15 x 1.4 mm)
				Added Lead-Free Product Information
				Updated the Ordering Information by Shading and Unshading MPNs as per availability
*B	413997	See ECN	NXR	Converted from Preliminary to Final
				Added CY7C1992BV18 part number to the title
				Added 278-MHz speed Bin
				Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North
				First Street” to “198 Champion Court”
				Changed C/C Pin Description in the features section and Pin Description
				Added power-up sequence details and waveforms
				Added foot notes #15, 16, 17 on page# 18
				Replaced Three-state with Tri-state
				Changed the description of IX from Input Load Current to Input Leakage Current on
				page# 19
				Modified the IDD and ISB values
				Modified test condition in Footnote #18 on page# 19 from VDDQ < VDD to
				VDDQ < VDD
				Replaced Package Name column with Package Diagram in the Ordering
				Information table
				Updated the Ordering Information
*C	472384	See ECN	NXR	Modified the ZQ Definition from Alternately, this pin can be connected directly to VDD
				to Alternately, this pin can be connected directly to VDDQ
				Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND
				Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD
				Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH, tCH
				from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP AC Switching
				Characteristics table
				Modified Power-Up waveform
				Changed the Maximum rating of Ambient Temperature with Power Applied from –10°C
				to +85°C to –55°C to +125°C
				Added additional notes in the AC parameter section
				Modified AC Switching Waveform
				Corrected the typo In the AC Switching Characteristics Table
				Updated the Ordering Information Table

Document #: 38-05623 Rev. *D Page 30 of 31

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