Table 6. Electrical Requirements for LGA1150 Socket

Parameter Value Comment
Mated loop inductance, Loop
<3.6nH
The inductance calculated for two contacts,
considering one forward conductor and one return
conductor. These values must be satisfied at the
worst-case height of the socket.
Socket Average Contact Resistance
(EOL)
19 mOhm
The socket average contact resistance target is
calculated from the following equation: sum (Ni X
LLCRi) / sum (Ni)
• LLCRi is the chain resistance defined as the
resistance of each chain minus resistance of
shorting bars divided by number of lands in the
daisy chain.
• Ni is the number of contacts within a chain.
• I is the number of daisy chain, ranging from 1
to 119 (total number of daisy chains).
The specification listed is at room temperature
and has to be satisfied at all time.
Max Individual Contact Resistance
(EOL)
100 mOhm
The specification listed is at room temperature
and has to be satisfied at all time. Socket Contact
Resistance: The resistance of the socket contact,
solderball, and interface resistance to the
interposer land; gaps included.
Bulk Resistance Increase ≤3 mΩ The bulk resistance increase per contact from
25 °C to 100 °C.
Dielectric Withstand Voltage 360 Volts RMS
Insulation Resistance 800 MΩ
Environmental Requirements

Design, including materials, shall be consistent with the manufacture of units that

meet the following environmental reference points.

The reliability targets in this section are based on the expected field use environment

for these products. The test sequence for new sockets will be developed using the

knowledge-based reliability evaluation methodology, which is acceleration factor

dependent. A simplified process flow of this methodology can be seen in Figure 13 on

page 27.

4.3
LGA1150 Socket—LGA1150 Socket and ILM Specifications
LGA1150 Socket
Application Guide September 2013
26 Order No.: 328999-002