Lincoln Electric SVM199-A Insulated Gate Bipolar Transistor Igbt Operation, Passive, Active

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E-7 THEORY OF OPERATION E-7

FIGURE E.6 - IGBT OPERATION

POSITIVE

VOLTAGE

APPLIED

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SOURCE GATE

n+ P n+ BODY REGION

n-	DRAIN DRIFT REGION
	BUFFER LAYER
n+
P+	INJECTING LAYER

DRAIN

A. PASSIVE

	SOURCE		GATE
n+	P	n+	BODY REGION
	n-		DRAIN DRIFT REGION
	n+		BUFFER LAYER
	P+		INJECTING LAYER
	DRAIN

B. ACTIVE

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INSULATED GATE BIPOLAR TRANSISTOR (IGBT) OPERATION

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An IGBT is a type of transistor. IGBT are semiconduc- tors well suited for high frequency switching and high current applications.

Example A in Figure E.6 shows an IGBT in passive mode. There is no gate signal, zero volts relative to the source, and therefore, no current flow. The drain termi- nal of the IGBT may be connected to a voltage supply; but since there is no conduction, the circuit will not sup- ply current to components connected to the source. The circuit is turned OFF like a light switch.

Example B shows the IGBT in an active mode. When the gate signals a positive DC voltage relative to the source, is applied to the gate terminal of the IGBT, it is capable of conducting current. A voltage supply con- nected to the drain terminal will allow the IGBT to con- duct and supply current to the circuit components cou- pled to the source. Current will flow through the con- ducting IGBT to downstream components as long as the positive gate signal is present. This is similar to turning ON a light switch.

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