DS87C530/DS83C530 EPROM/ROM Microcontrollers with
DC ELECTRICAL CHARACTERISTICS (continued)
(VCC = 4.5V to 5.5V, TA =
PARAMETER | SYMBOL | MIN | TYP | MAX | UNITS | NOTES |
Input Leakage Port 0, EA, Pins, I/O Mode | IL |
| +10 | A | 13 | |
Input Leakage Port 0, Bus Mode | IL |
| +300 | A | 14 | |
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RST Pulldown Resistance | RRST | 50 |
| 200 | k |
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Note 1: Storage temperature is defined as the temperature of the device when VCC = 0V and VBAT = 0V. In this state, the contents of SRAM are not battery backed and are undefined.
Note 2: All parameters apply to both commercial and industrial temperature operation unless otherwise noted.
Note 3: All voltages are referenced to ground.
Note 4: Active current measured with 33MHz clock source on XTAL1, VCC = RST = 5.5V, other pins disconnected.
Note 5: Idle mode current measured with 33MHz clock source on XTAL1, VCC = 5.5V, RST at ground, other pins disconnected.
Note 6: Stop mode current measured with XTAL1 and RST grounded, VCC = 5.5V, all other pins disconnected.
Note 7: VCC = 0V, VBAT = 3.3V. 32.768kHz crystal with 12.5pF load capacitance between RTCX1 and RTCX2 pins. RTCE bit set to 1.
Note 8: RST = VCC. This condition mimics operation of pins in I/O mode. Port 0 is
Note 9: During a
Note 10: When addressing external memory. This specification only applies to the first clock cycle following the transition.
Note 11: This is the current required from an external circuit to hold a logic low level on an I/O pin while the corresponding port latch bit is set to 1. This is only the current required to hold the low level; transitions from 1 to 0 on an I/O pin will also have to overcome the transition current.
Note 12: Ports 1, 2, and 3 source transition current when being pulled down externally. It reaches its maximum at approximately 2V.
Note 13: 0.45 < VIN < VCC. RST = VCC. This condition mimics operation of pins in I/O mode.
Note 14: 0.45 < VIN < VCC. Not a
TYPICAL ICC vs. FREQUENCY
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