NXP Semiconductors PBLS4004D a function of collector current; typical values, collector-emitter voltage; typical values

PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 8 of 15
NXP Semiconductors PBLS4004D
40 V PNP BISS loadswitch
VCE=−5V
(1) Tamb= 100 °C
(2) Tamb=25°C
(3) Tamb=−55 °C
Tamb=25°C
Fig 5. TR1 (PNP): DC current gain as a function of
collector current; typical values Fig 6. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values
VCE=−5V
(1) Tamb=−55 °C
(2) Tamb=25°C
(3) Tamb= 100 °C
IC/IB=20
(1) Tamb=−55 °C
(2) Tamb=25°C
(3) Tamb= 100 °C
Fig 7. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values
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400
800
1200
hFE
0
IC (mA)
−10−1−104
−103 −1−102 −10
(2)
(3)
(1)
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−0.8
−1.6
−2.4
IC
(A)
0
VCE (V)
0−5−4−2−3−1
IB (mA) = −24
−2.4
−4.8
−7.2
−12
−14.4
−9.6
−16.8
−19.2
−21.6
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−0.6
−0.4
−0.8
−1.0
VBE
(V)
−0.2
IC (mA)
−10−1−104
−103 −1−102 −10
(3)
(1)
(2)
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−0.5
−0.9
−1.3
VBEsat
(V)
−0.1
IC (mA)
−10−1−104
−103 −1−102 −10
(2)
(3)
(1)