1. Product profile

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
nLow VCEsat (BISS) and resistor-equipped transistor in one package
nLow threshold voltage (<1 V) compared to MOSFET
nLow drive power required
nSpace-saving solution
nReduction of component count
1.3 Applications
nSupply line switches
nBattery charger switches
nHigh-side switches for LEDs, drivers and backlights
nPortable equipment
1.4 Quick reference data
[1] Device mounted on a ceramicPrinted-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp≤300µs; δ≤0.02.
PBLS4004D

40 V PNP BISS loadswitch

Rev. 03 — 6 January 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low VCEsat transistor
VCEO collector-emitter voltage open base - - −40 V
ICcollector current [1] --−1A
RCEsat collector-emitter saturation
resistance IC=−500 mA;
IB=−50mA
[2] - 240 340 mΩ
TR2; NPN resistor-equipped transistor
VCEO collector-emitter voltage open base - - 50 V
IOoutput current - - 100 mA
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2