NXP Semiconductors PBLS4004D 7. Characteristics

PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 6 of 15
NXP Semiconductors PBLS4004D
40 V PNP BISS loadswitch
7. Characteristics
CeramicPCB, Al2O3, standard footprint
Fig 4. TR1 (PNP):Transient thermal impedance from junctionto ambient as a function of pulse duration;typical
values
006aaa464
10
1
102
103
Zth(j-a)
(K/W)
10−51010−2
10−4102 10−1
tp (s)
10−3103
1
0.75
0.5
0.33
0.2
0.1
δ = 1
0.05
0.02
0.01
0
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low VCEsat transistor
ICBO collector-base cut-off
current VCB =−40V; IE=0A - - −0.1 µA
VCB =−40V; IE=0A;
Tj= 150 °C-- −50 µA
ICES collector-emitter
cut-off current VCE =−30V; VBE =0V - - −0.1 µA
IEBO emitter-base cut-off
current VEB =−5V; IC=0A - - −0.1 µA
hFE DCcurrent gain VCE =−5V; IC=−1 mA 300 - -
VCE =−5V; IC=−100 mA [1] 300 - 800
VCE =−5V; IC=−500 mA [1] 215 - -
VCE =−5V; IC=−1A [1] 150 - -
VCEsat collector-emitter
saturation voltage IC=−100 mA; IB=−1mA - −80 −140 mV
IC=−500mA; IB=−50 mA [1] -−120 −170 mV
IC=−1A; IB=−100 mA [1] -−220 −310 mV
RCEsat collector-emitter
saturation resistance IC=−500mA; IB=−50 mA [1] - 240 340 mΩ
VBEsat base-emitter
saturation voltage IC=−1 A; IB=−50 mA [1] -- −1.1 V
VBEon base-emitter
turn-on voltage VCE =−5 V; IC=−1A [1] -- −1V