NXP Semiconductors PBLS4004D In accordance with the Absolute Maximum Rating System (IEC 60134).

PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 3 of 15
NXP Semiconductors PBLS4004D
40 V PNP BISS loadswitch
[1] Device mounted on an FR4PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramicPCB, Al2O3, standard footprint.
Ptot total power dissipation Tamb ≤25 °C[1] - 250 mW
[2] - 350 mW
[3] - 400 mW
TR2; NPN resistor-equipped transistor
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VIinput voltage
positive - +40 V
negative - −10 V
IOoutput current - 100 mA
ICM peak collector current single pulse; tp≤1ms - 100 mA
Ptot total power dissipation Tamb≤25 °C - 200 mW
Per device
Ptot total power dissipation Tamb≤25 °C[1] - 400 mW
[2] - 530 mW
[3] - 600 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit