NXP Semiconductors PBLS4004D Fig 9. TR1 (PNP): Collector-emitter saturation, Fig 10. TR1 (PNP): Collector-emitter saturation, Fig 11. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current;, Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current;

PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 9 of 15
NXP Semiconductors PBLS4004D
40 V PNP BISS loadswitch
IC/IB=20
(1) Tamb= 100 °C
(2) Tamb=25°C
(3) Tamb=−55 °C
Tamb=25°C
(1) IC/IB=100
(2) IC/IB=50
(3) IC/IB=10
Fig 9. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 10. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
IC/IB=20
(1) Tamb= 100 °C
(2) Tamb=25°C
(3) Tamb=−55 °C
Tamb=25°C
(1) IC/IB=100
(2) IC/IB=50
(3) IC/IB=10
Fig 11. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa466
IC (mA)
−10−1−104
−103 −1−102 −10
−10−1
−1
VCEsat
(V)
−10−2(3)
(1)
(2)
006aaa471
IC (mA)
−10−1−104
−103 −1−102 −10
−10−2
−10−1
−1
−10
VCEsat
(V)
−10−3
(3)
(2)
(1)
006aaa470
IC (mA)
−10−1−104
−103 −1−102 −10
1
10
102
103
RCEsat
(Ω)
10−1
(3)
(1)
(2)
006aaa472
IC (mA)
−10−1−104
−103 −1−102 −10
1
10
102
103
RCEsat
(Ω)
10−1
(3)
(2)
(1)