PBLS4004D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 6 January 2009 7 of 15
NXP Semiconductors PBLS4004D
40 V PNP BISS loadswitch
[1] Pulse test: tp≤300µs; δ≤0.02.
fTtransition frequency IC=−50mA; VCE =−10 V;
f = 100 MHz 150 - - MHz
Cccollector capacitance VCB =−10 V; IE=i
e=0A;
f=1MHz - - 12 pF
TR2; NPN resistor-equipped transistor
ICBO collector-base cut-off
current VCB =50V; I
E= 0 A - - 100 nA
ICEO collector-emitter
cut-off current VCE =30V; I
B=0A - - 1 µA
VCE =30V; I
B=0A;
Tj= 150 °C-- 50µA
IEBO emitter-base cut-off
current VEB =5V; I
C= 0 A - - 180 µA
hFE DCcurrent gain VCE =5V; I
C= 5 mA 60 - -
VCEsat collector-emitter
saturation voltage IC=10 mA; IB=0.5 mA - - 150 mV
VI(off) off-state input voltage VCE=5V; I
C= 100 µA - 1.1 0.8 V
VI(on) on-state input voltage VCE= 0.3 V; IC=5 mA 2.5 1.7 - V
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
Cccollector capacitance VCB =10V; I
E=i
e=0A;
f=1MHz - - 2.5 pF
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit