Philips BGY280

2000 Nov 15 3

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

CHARACTERISTICS

ZS=Z

L=50Ω; PD1,2 =0dBm; V

S1 =V

S2 = 3.6 V; VC1,2 ≤2.2 V; Tmb =25°C; tp= 575 µs; δ =2:8;

f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ILleakage current VC1,2 =0.2V −−10 µA

ICM1, ICM2 peak control current −−2mA

PL1 load power GSM 900 VC1 = 2.2 V 34.5 35.5 −dBm

VC1 = 2.2 V; VS1 =3.2V; T

mb =25°C34 35 −dBm

PL2 load power GSM 1800 VC2 = 2.2 V 32.5 33.5 −dBm

VC2 = 2.2 V; VS1 =3.2V; T

mb =25°C32 33 −dBm

GP1 power gain GSM900 PL1 = 35.5 dBm −35.5 −dB

GP2 power gain GSM1800 PL2 =33dBm −33.5 −dB

η1efficiency GSM900 PL1 =35dBm 40 45 −%

η2efficiency GSM1800 PL2 =32dBm 33 38 −%

H2, H3

harmonics GSM900 PL1 =34dBm −−−40 dBc

harmonics GSM1800 PL2 =32dBm −−−35 dBc

VSWRin

input VSWR of active device VS1,2 = 3.2 to 5 V; PL1 =34dBm;

PL2 =32dBm

−3:1

input VSWR of inactive

device

VS1,2 = 3.2 to 5 V; VC1,2 ≤0.5 V −8:1

isolation GSM900 VC1,2 =0.5V; P

D1,2 =3dBm −−54 −37 dBm

isolation GSM1800 VC1,2 =0.5V; P

D1,2 =3dBm −−42 −37 dBm

second harmonic isolation

from GSM900 into GSM1800

PL1 =35dBm −−21 −20 dBm

maximum slope −5dBm< P

L1,2 <P

Lmax 120 −200 dB/V

trcarrier rise time PL1 = 6 to 34 dBm; PL2 =4to32dBm;

time to settle within −0.5 dB of final PL

−1.5 2 µs

tfcarrier fall time PL1 = 6 to 34 dBm; PL2 =4to32dBm;

time to fall below −37 dBm

−1.5 2 µs

noise power GSM900

PL1 ≤34 dBm; bandwidth = 100 kHz;

f = 925 - 935 MHz; fc= 897.5 MHz

−−−71 dBm

PL1 ≤34 dBm; bandwidth = 100 kHz;

f = 935 - 960 MHz; fc= 897.5 MHz

−−82 −80 dBm

noise power GSM1800 PL2 ≤32 dBm; bandwidth = 100 kHz;

f = 1805 - 1880 MHz; fc= 1747.5 MHz

−−80 −73 dBm

AM/PM conversion PD1,2 =−0.5to0.5dBm;

PL1,2 = constant during measurement

for PL1 = 6 to 34 dBm and

PL2 = 4 to 32 dBm

−−6 deg/dB

AM/AM conversion PL1 = 6 to 34 dBm; PL2 =4to32dBm;

f = 100 kHz; PD1,2 =5.4%

−25 %