Samsung 1H 2011 manual NtRAM, Ft Sb

NtRAM

Type	Density	Organization	Part Number	Package	Operating	Vdd (V)	Access Time	Speed	I/O Voltage	Production Status
					Mode		tCD (ns)	tCYC (MHz)	(V)
	72Mb	2Mx36	K7N643645M	100-TQFP	SPB	2.5	2.6, 3.5	250, 167	2.5	Mass Production
		4Mx18	K7N641845M	100-TQFP	SPB	2.5	2.6, 3.5	250, 167	2.5	Mass Production
		1Mx36	K7N323631C	100-TQFP, 165FBGA	SPB	3.3, 2.5	2.6, 3.5	250, 167	3.3, 2.5	Mass Production
	36Mb	2Mx18	K7N321831C	100-TQFP, 165FBGA	SPB	3.3, 2.5	2.6, 3.5	250, 167	3.3, 2.5	Mass Production
		1Mx36	K7M323635C	100-TQFP	FT	3.3, 2.5	7.5	118	3.3, 2.5	Mass Production
		2Mx18	K7M321835C	100-TQFP	FT	3.3, 2.5	7.5	118	3.3, 2.5	Mass Production
		1Mx18	K7N161831B	100-TQFP, 165FBGA	SPB	3.3, 2.5	2.6, 3.5	250, 167	3.3, 2.5	Mass Production
	18Mb	512Kx36	K7N163631B	100-TQFP, 165FBGA	SPB	3.3, 2.5	2.6, 3.5	250, 167	3.3, 2.5	Mass Production
		1Mx18	K7M161835B	100-TQFP	FT (SB)	3.3	6.5	133	3.3, 2.5	Mass Production
		512Kx36	K7M163635B	100-TQFP	FT (SB)	3.3	6.5	133	3.3, 2.5	Mass Production
NtRAM		256Kx36	K7N803601B	100-TQFP	SPB	3.3	3.5	167	3.3,2.5	Not for new designs
		512Kx18	K7N801801B	100-TQFP	SPB	3.3	3.5	167	3.3,2.5	Not for new designs
		256Kx36	K7N803609B	100-TQFP	SPB	3.3	2.6	250	3.3,2.5	Not for new designs
		512Kx18	K7N801809B	100-TQFP	SPB	3.3	2.6	250	3.3,2.5	Not for new designs
	8Mb	256Kx36	K7N803645B	100-TQFP	SPB	2.5	3.5	167	2.5	Not for new designs
		512Kx18	K7N801845B	100-TQFP	SPB	2.5	3.5	167	2.5	Not for new designs
		256Kx36	K7N803649B	100-TQFP	SPB	2.5	2.6	250	2.5	Not for new designs
		512Kx18	K7N801849B	100-TQFP	SPB	2.5	2.6	250	2.5	Not for new designs
		512Kx18	K7M801825B	100-TQFP	FT	3.3	6.5	133	3.3, 2.5	Not for new designs
		256Kx36	K7M803625B	100-TQFP	FT	3.3	6.5	133	3.3, 2.5	Not for new designs
	4Mb	128Kx36	K7N403609B	100-TQFP	SPB	3.3	3	200	3.3,2.5	Not for new designs
		256Kx18	K7N401809B	100-TQFP	SPB	3.3	3	200	3.3,2.5	Not for new designs
SPB and FT	4Mb	256Kx18	K7B401825B	100-TQFP	SB	3.3	6.5	133	3.3, 2.5	Not for new designs
NOTES:	All TQFP products are lead free
	NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz

NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time

Recommended SPB speeds are 250MHz and 167MHz Recommended SB Acess Speed is 7.5ns

Late-Write RR SRAM

Density Organization		Part Number	Package	Operating	Vdd (V)	Access Time	Speed tCYC	I/O Voltage	Production Status
				Mode		tCD (ns)	(MHz)	(V)
32Mb	1Mx36	K7P323674C	119-BGA	SP	1.8 / 2.5V	1.6, 2.0	300,250	1.5 (Max 1.8)	Mass Production
	2Mx18	K7P321874C	119-BGA	SP	1.8 / 2.5V	1.6, 2.0	300,250	1.5 (Max 1.8)	Mass Production
	256Kx36	K7P803611B	119-BGA	SP	3.3	1.6	300	1.5 (Max.2.0)	Mass Production
8Mb	512Kx18	K7P801811B	119-BGA	SP	3.3	1.6	300	1.5 (Max.2.0)	Mass Production
	256Kx36	K7P803666B	119-BGA	SP	2.5	2	250	1.5 (Max.2.0)	Mass Production
	512Kx18	K7P801866B	119-BGA	SP	2.5	2	250	1.5 (Max.2.0)	Mass Production

SR AM

samsung.com/semi/sram

1H 2011

NtRAM & Late Write RR SRAM 17