Samsung 1H 2011 manual Qdr, QDR II-2B, QDR II-4B, QDR II 2B, QDR II 4B

QDR SYNCHRONOUS SRAM

Type	Density Organization		Part	Package	Vdd	Access Time	Cycle Time	I/O Voltage	Production	Comments
			Number		(V)	tCD (ns)		(V)	Status
		1Mx18	K7Q161862B	165-FBGA	1.8v / 2.5v	2.5	167	1.5,1.8	Mass Production	QDR I - 2B
QDR I	18Mb		K7Q161864B	165-FBGA	1.8v / 2.5v	2.5	167	1.5,1.8	Mass Production	QDR I - 4B
		512Kx36	K7Q163662B	165-FBGA	1.8v / 2.5v	2.5	167	1.5,1.8	Mass Production	QDR I - 2B
	K7Q163664B		165-FBGA	1.8v / 2.5v	2.5	167	1.5,1.8	Mass Production	QDR I - 4B
		8Mx9	K7R640982M	165-FBGA	1.8	0.45,0.45,0.50	250,200,167	1.5,1.8	Mass Production	QDR II-2B
		4Mx18	K7R641882M	165-FBGA	1.8	0.45,0.45,0.50	250,200,167	1.5,1.8	Mass Production	QDR II-2B
	72Mb		K7R641884M	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	QDR II-4B
		2Mx36	K7R643682M	165-FBGA	1.8	0.45,0.45,0.50	250,200,167	1.5,1.8	Mass Production	QDR II-2B
	K7R643684M		165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	QDR II-4B
		4Mx9	K7R320982C	165-FBGA	1.8	0.45	167, 250, 200	1.5,1.8	Mass Production	QDR II-2B
		2Mx18	K7R321882C	165-FBGA	1.8	0.45	167, 250, 200	1.5,1.8	Mass Production	QDR II-2B
QDR II	36Mb		K7R321884C	165-FBGA	1.8	0.45	200, 300, 250	1.5,1.8	Mass Production	QDR II-4B
		1Mx36	K7R323682C	165-FBGA	1.8	0.45	300, 250, 200	1.5,1.8	Mass Production	QDR II-2B
	K7R323684C		165-FBGA	1.8	0.45	200, 300, 250	1.5,1.8	Mass Production	QDR II-4B
		2Mx9	K7R160982B	165-FBGA	1.8	0.45,0.45,0.50	250,200,167	1.5,1.8	Mass Production	QDR II - 2B
		1Mx18	K7R161882B	165-FBGA	1.8	0.45,0.45,0.50	250,200,167	1.5,1.8	Mass Production	QDR II - 2B
	18Mb		K7R161884B	165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	QDR II - 4B
		512Kx36	K7R163682B	165-FBGA	1.8	0.45,0.45,0.50	250,200,167	1.5,1.8	Mass Production	QDR II - 2B
	K7R163684B		165-FBGA	1.8	0.45,0.45,0.45,0.50	300,250,200,167	1.5,1.8	Mass Production	QDR II - 4B
			K7S3236T4C	165-FBGA	1.8	0.45	400	1.5	Mass Production	QDR II + 4B,
										2 clocks latancy
		1Mx36
	K7S3236U4C		165-FBGA	1.8	0.45	400	2.5	Mass Production	QDR II + 4B,
										2.5 clocks latancy
	36Mb
			K7S3218T4C	165-FBGA	1.8	0.45	400	1.5	Mass Production	QDR II + 4B,
										2 clocks latancy
QDR II+		2Mx18
	K7S3218U4C		165-FBGA	1.8	0.45	400	1.5	Mass Production	QDR II + 4B,
										2.5 clocks latancy
		1Mx18	K7S1618T4C	165-FBGA	1.8	0.45	400, 333	1.5	Mass Production	QDR II + 4B,
										2 clocks latancy
	18Mb
		512Kx36	K7S1636U4C	165-FBGA	1.8	0.45	400, 333	1.5	Mass Production	QDR II + 4B,
										2.5 clocks latancy
NOTES:	For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4
	For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit

For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended

For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed

SR AM

samsung.com/semi/sram

1H 2011

QDR I / II / II+ 19