Synchronous SRAM Ordering Information

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

K 7 X X X X X X X X

-

X X X X X

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SAMSUNG Memory

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Packaging Type

Sync SRAM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Speed

Small Classification

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Speed

Density

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Temp, Power

Density

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Package

Organization

 

 

 

 

 

 

 

 

 

 

 

 

 

 

---

Organization

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Generation

Vcc, Interface, Mode

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vcc, Interface, Mode

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.Memory (K)

2.Sync SRAM: 7

3.Small Classification

A:Sync Pipelined Burst

B:Sync Burst

D: Double Data Rate

I:Double Data Rate II, Common I/O

J:Double Data Rate, Separate I/O

K:Double Data II+, Common I/O

M:Sync Burst + NtRAM

N:Sync Pipelined Burst + NtRAM

P:Sync Pipe

Q:Quad Data Rate I

R:Quad Data Rate II

S:Quad Data Rate II+

4~5. Density

80: 8M

16: 18M

40: 4M

32: 36M

64: 72M

 

6~7. Organization

 

 

 

08: x8

09: x9

18: x18

32: x32

36: x36

 

8~9. Vcc, Interface, Mode

00:3.3V,LVTTL,2E1D WIDE

01:3.3V,LVTTL,2E2D WIDE

08:3.3V,LVTTL,2E2D Hi SPEED

09:3.3V,LVTTL,Hi SPEED

11:3.3V,HSTL,R-R

12:3.3V,HSTL,R-L

14:3.3V,HSTL,R-R Fixed ZQ

22:3.3V,LVTTL,R-R

23:3.3V,LVTTL,R-L

25:3.3V,LVTTL,SB-FT WIDE

30:1.8/2.5/3.3V,LVTTL,2E1D

31:1.8/2.5/3.3V,LVTTL,2E2D

35:1.8/2.5/3.3V,LVTTL,SB-FT

44:2.5V,LVTTL,2E1D

45:2.5V,LVTTL,2E2D

49: 2.5V,LVTTL,Hi SPEED

52:2.5V,1.5/1.8V,HSTL,Burst2

54:2.5V,1.5/1.8V,HSTL,Burst4

62:2.5V/1.8V,HSTL,Burst2

64:2.5V/1.8V,HSTL,Burst4

66:2.5V,HSTL,R-R

74:1.8V,2.5V,HSTL,All

82:1.8V,HSTL,Burst2

84:1.8V,HSTL,Burst4

88:1.8V,HSTL,R-R

T2: 1.8V,2Clock Latency,Burst2

T4: 1.8V,2Clock Latency,Burst4

U2: 1.8V,2.5Clock Latency,Burst2

U4: 1.8V,2.5Clock Latency,Burst4

10.Generation

M:1st Generation

A:2nd Generation

B:3rd Generation

C:4th Generation

D:5th Generation

11.“--”

12.Package

H:BGA,FCBGA,PBGA

G:BGA, FCBGA, FBGA (LF)

F:FBGA

E:FBGA (LF)

Q:(L)QPF

P:(L)QFP(LF)

C:CHIP BIZ

W:WAFER

13.Temp, Power

COMMON (Temp,Power)

0:NONE,NONE (Containing of error handling code)

C: Commercial,Normal

E: Extended,Normal

I: Industrial,Normal

WAFER, CHIP BIZ Level Division

0:NONE,NONE

1:Hot DC sort

2:Hot DC, selected AC sort

14~15. Speed

Sync Burst,Sync Burst + NtRAM

< Mode is R-L > (Clock Accesss Time)

65: 6.5ns

70: 7ns

75: 7.5ns

80: 8ns

85: 8.5ns

 

Other Small Classification (Clock Cycle Time)

10: 100MHz

11: 117MHz

13: 133MHz

14: 138MHz

16: 166MHz

20: 200MHz

25: 250MHz

 

26: 250MHz(1.75ns)

27: 275MHz

30: 300MHz

33: 333MHz

35: 350MHz

37: 375MHz

40: 400MHz(t-CYCLE)

42: 425MHz

45: 450MHz

 

50:500MHz (except Sync Pipe)

16.Packing Type (16 digit)

-Common to all products, except of Mask ROM

-Divided into TAPE & REEL (In Mask ROM, divided into TRAY, AMMO packing separately)

Type

Packing Type

New Marking

 

 

 

Component

TAPE & REEL

T

 

 

 

 

Other (Tray, Tube, Jar)

0 (Number)

 

 

 

 

Stack

s

 

 

 

Component

TRAY

Y

 

 

 

(Mask ROM)

AMMO PACKING

A

 

 

 

Module

MODULE TAPE & REEL

P

 

 

 

 

MODULE Other Packing

M

 

 

 

20SRAM Ordering Information

1H 2011

samsung.com/semi/sram

Page 20
Image 20
Samsung 1H 2011 manual 25 3.3V,LVTTL,SB-FT Wide, None,None, Tape & Reel, Tray, Ammo Packing