Support for
New Charge Pump ICs
Features of New Charge Pump ICs
CCD image sensors require a high drive voltage of 10 to 20 V. This 10 to 20 V level is created by stepping up the 3 V power supply level.
Since conventional charge pump voltage
SANYO has, however, discovered a way of fusing their high level analog circuit and device technologies to overcome this problem.
This new charge pump technology can step up a regulated voltage by a factor of three or higher with an efficiency as high as 70%. Furthermore it can provide an output current of several tens of mA.
SANYO was the first in the industry to develop a
This new charge pump technology can provide both positive and negative stepped up levels, can be combined into multiple stages, and can provide multiple output levels. Thus this circuit technology is optimal for use in future camera cell phones that include a
This IC is based on a unique SANYO idea and is a
This IC introduces technologies that completely overturn the previous common knowledge that although charge pump circuits were low noise, they suffered from poor efficiency.
Charge pump power supply application
The ability to provide a
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| +15 V(10 mA) | CCD |
| 3 V |
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| Charge pump | ||
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| +7 V(500 ∝A) |
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| Charge pump | LTPS | |
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| 3V |
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| Charge pump | +4.5 V(100 mA) | White LED |
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CCD Power Supply IC for Camera Cell Phones
●High efficiency
(Prior to the regulator: 90 to 95 %)
●Coilless, low noise
●Supports high output current designs
●The only external components are thin form capacitors (no coils or diodes required)
●Can provide both positive and negative
●Supports fine
+0.5 ⋅ n ⋅ VDD
●Optimal for use as the power supply in portable equipment
IPBlock diagram
Clock | Clock generator & driver |
C1 | C2 | Cn | Cn+1 |
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VDD |
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VIN | Charge pump | VOUT | Regulator | VO |
LV5711FN
●Regulates a 3.3 to 4.5 V battery level to 3.1 V and steps up that level 3⋅ and 6⋅ using a charge pump, to provide the two regulated power supply levels required by the CCD image sensor.
●VH = +15.0 V
●VL =
●Two independent charge pump systems are provided for VH and VL
●
Under
development
Block diagram
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| VSS1 |
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| 1 ∝F | VBAT3 |
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| 3.1 V / 100 mA |
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| 3.1 V / 100 mA |
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| OUT1 | 1 ∝F |
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| LDO |
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VBAT4 | 13 |
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| VDD1,2,3,4 |
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OUT3 |
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11 | 3.1 V / 1 mA |
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1 ∝F |
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VSS2 |
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OUT4 | 12 | 1.8 V / 100 mA | 40 | C11A | 0.22 ∝F |
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1∝F |
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| (VDD✕1) |
FVREF | 26 |
| 38 | C11B | |
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Sample characteristics of a
Output voltages from positive and negative
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| VDD3 | 17 |
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| C12B |
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Dependency of efficiency on the supply voltage
| 90 |
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(%) | 70 |
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60 |
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Efficiency |
| 3.5 V |
| 50 | 2.9 V |
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| 40 | 3.3 V |
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| 30 | 3.7 V |
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20VDD=3.3V
At IOUT=50 mA, efficiency=80.6%
10At IOUT=100 mA, efficiency=72.0% Maximum efficiency: 80.8%
00 10 20 30 40 50 60 70 80 90 100
Output current, IOUT (mA)
■Plus
Positive step-up voltage vs. output current
12
10 | 3.7 V |
(V) |
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| 3.3 V |
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VOUT | 8 |
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voltage, |
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Output | 4 |
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| At VDD=2.9 V, VPP=7.78 V |
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| At VDD=3.3 V, VPP=9.03 V |
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| At VDD=3.7 V, VPP=10.26 V |
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| 0 | 10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 |
Output current, IOUT (mA)
■Minus
Negative
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| 2.9 V |
| 3.7 V |
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(V)OUT |
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V |
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voltage, |
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Output |
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| IOUT=50 mA |
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| 0 | 10 | 20 | 30 | 40 | 50 | 60 | 70 | 80 | 90 | 100 |
Output current, IOUT (mA)
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0.47 ∝F |
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(VDD✕1) |
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0.47 ∝F |
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(VDD✕2) |
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0.47 ∝F |
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| (VDD✕6) |
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| VL_C25 | 24 |
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| 1 ∝F |
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| 2 | VH_C17 |
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| STBY | 30 |
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| SLEEP | 29 |
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| VDD4 |
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Note: Short OUT1 to VDD1 through VDD4. |
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| applied voltages to the capacitor. |
28 |
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