Sanyo EP92H manual SANYOs Lineup of High-Reliability Discrete Devices

More Data Even Faster. Supporting Needs for Higher Performance with Peripheral Components

SANYO's Lineup of High-Reliability Discrete Devices

SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets. SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data due to the inclusion of high pixel count cameras in this equipment.

Ultralow on-resistance MOS devices for power management

Bipolar Transistor for LNA

Devices for CCD camera module

Ultrahigh-frequency transistors

Low and medium output MOS device development roadmap	Ultralow on-resistance MOS device generation map
Reduced on-resistance/reduced voltage drive

Low noise, High gain transistors (fT=20 GHz)

SBFP405M, SBFP420M...etc.

GaAs MMIC products for antenna switches and local switches

Low insertion loss MMIC /

High isolation MMIC

SPM3211, SPM3212,

SPM3215, SPM3218...etc.

EC3H02B, 2SC5538, 2SC5539...etc.

Schottky barrier diodes

EC2D01B, SB0203EJ...etc.

Bipolar transistor for VCO

Low phase noise transistors

EC3H02B, EC3H09B...etc.

Transistors for LCD backlight circuits

Precise interface control MOSFETs 5LN01S, 5LP01S

Device

¥Trench structure (T3/4) deployment (T3: 10 million, T4: 16 million cells per square inch)

¥Shallow trench technology established

¥High ESD resistance technology established

Miniaturization

MOSFET

Miniaturization

¥Lineup covering 12 to 200 V

¥Low on-resistance process established (T2 trench process)

	Differentiation
Added functionality
ExPD
¥ Low Side	Multi Function
¥ Drivers (high voltage/
low voltage)
¥ PicoLogicTM

High performance

T4: 16 million cells per square inch)

Wireless package

High side switches

Device

¥Trench structure (T4) -> (T5)

¥Increased speed and further improved ultralow on-resistance

¥Reduced voltage drive

(from 1.5 to 1.2 V)

¥Shorter turnaround times (fewer masks)

MOSFET

¥Deployment to miniature thin-form products; VEC8, SCH6, ECSP

¥Wireless package technology ECH8, TSSOP-WL, FlipFET

¥Higher power and lower cost

ExPD

¥Built-in driver MOSFETs

¥Trench low side

¥Back gate switches for lithium battery charging and discharging

¥High side switches and condenser microphones for cell phones

	100	1998	2000	2002	2004	2005	2006	Cell pitch
		10 ∝m	5 ∝m	3 ∝m	2.5 ∝m	1.8 ∝m	1.3 ∝m	Design rule
	90	1.1 ∝m	0.8 ∝m	0.55 ∝m	0.35 ∝m	0.25 ∝m	0.18 ∝m	270	]
RON ¥ A [mΩ ¥ mm2 ]									Cell density [Mcell/inch2
	80	RDS(on)			Low capacity			240
		15 mΩ			process
	70							210
	60	RON					density	180
	50	¥				Cell		150
	40	A						120
	30				RDS(on)			90
	20		RDS(on)		3.2 mΩ	RDS(on)	RDS(on)	60
			5.3 mΩ	RDS(on)		2.8 mΩ
	10						2.5 mΩ	30
				3.8 mΩ
	0							0
		J5	T1	T2	T3	T4	T5

Low voltage	VGS=4V
		2.5V
drive
			1.8V

Devices for Li-ion batteries

Ultralow on-resistance MOSFET series ECH8601, FTD2017A...etc.

MCH6614(2 in 1)...etc.

Complex devices

MCH5809, CPH5809(MOS + SBD)...etc.

2003 2004 2005

2006 2007

[Year]

1.5V

Schottky barrier diodes

SBS804...etc.

Junction FETs for ECM

Ultrathin package: VTFP

Power management switches

Ultralow on-resistance MOSFET series VEC2301, SCH2602, ECH8603 MCH6307...etc.

Low VF/IR Schottky barrier diodes for power management

Low VF/IR Schottky barrier diode development roadmap VF – I comparison data for earlier and low-VFdevices Schottky barrier diodes

IF-VF(Comparison with earlier SANYO products)

TF218TH, TF208TH, TF202(SSFP)...etc.

Performance

High performance

2nd Generation

Low VF+ Ti barrier

1st Generation

SBD

Parallel, Twin SBD

Multi Function MOS + SBD

TR + SBD

New generation			Low forward voltage	10
	Low VF	- Low IR
3rd Generation	New structure Schottky		Miniature thin-form
	barrier diode				Reduced by
			package
Low VF - high-density	Low VF - Low IR				0.2 V
sub + Ti barrier	Barrier metal				New Product
Low IR - high-density	inspection
	150¡C
sub + MO barrier				1.0	SBS010M
	guaranteed
	Wireless		Contributes to	[A]
					SB10-015C
Compound				F
				I
product			increased		Earlier Product
deployment
			efficiency,	0.1

LCD backlight ultralow saturation voltage transistors

30V 0.7A 0.55V	15V 1A 0.4V	15V 1A 0.4V
PCP	CPH	MCPH

15V 1A 0.4V			miniaturization,
SCH
ECH		15V 2A 0.4V⋅2	and thinner
		SOP-WL
	30V 1A 0.45V		form factors
	4pin ECSP

Ultralow saturation voltage transistor development roadmap

					4th Generation
				High performance	High-speed SW
					MBIT-IV
				3rd Generation
Miniaturization—		High performance		MBIT-III
	High performance	2nd Generation		electrode)
		MBIT-II	Low cost
				MBIT-IIs
Performance/functionality				(Single-layer
	1st Generation	High performance/low cost
					High hFE support - ECSP¤
	MBIT			PicoTR surface mounting	package
		MCPH, PCP, and TP leads		package deployment	High voltage (80 V and over)
					- High output support
		Package deployment -		Support for hFE1 ranking
	High
		Compound CPH deployment
	performance

PCP	Small	CPH	MCPH ECH	SCH	ECSP	SOP-WL
2002		2003	2004	2005	2006	2007
						[Year]

Low saturation voltage transistor generation map

	160
	140				Cell density			Ultra low saturation voltage
		RCE(sat)			65Kcell/inch2			Narrow width of hFE
mΩ	120		140mΩ					High switching speed
	100		50%			Cell density
-			down			144cell/inch2
(sat)	80							Cell density
						30%
CE								144cell/inch2
						down		Low resistance
R
	60			RCE(sat)				of collector layer
				70mΩ
	40					Very low saturation voltage	RCE(sat)
								50mΩ	30%
						High switching speed
	20								down RCE(sat)
						Small and high power package				35mΩ
			Before	1998		2000	2002		2004	2006
		1997		1999		2001	2003		2005

hFE=100 to 400, Width=300 [Year] hFE=200 to 560, Width=360

hFE=250 to 400, Width=150

Befor	1999	2001
1998	2000	2002

2003	2005	2007		0.01
					0.1	0.2	0.3	0.4	0.5	0.6	0.7
2004	2006		in end products!	0
		[Year]						VF [V]

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