Sanyo EP92H - page 20

●High-frequency silicon transistors for VCO
EC3H09B
Oscillator ECSP
Type No.
Usage Package Size
(mm)
100
1.0 × 0.6
1.4 × 0.8
11.2 4 70
VCEO
(V)
fT
typ.
(GHz)
IC
(mA)
EC3H11B ECSP 100
1.0 × 0.6 10.5 4 80
SPFP420B ECSP 100
1.0 × 0.6 25 4.5 35
SPFP540B ECSP 100
1.0 × 0.6 29 4.5 80
2SC5781 SSFP 100
1.4 × 0.8 11.2 4 70
2SC5783 SSFP 100
10.5 4 80
PC
(mW)
1.5
1.5
1.1
0.9
1.5
1.5
NF
typ.(dB)
6
5
17
8.5
6
5
S21e 2
typ.(dB)
FS301 (TR1 Side) Oscillator
+ Buffer ECSP 100
1.2 × 0.8 12.5 4 30
(TR2 Side)
FS303 (TR1 Side)
(TR2 Side)
FS304 (TR1 Side)
(TR2 Side)
100
25 4.5 35
ECSP 100
1.2 × 0.8 12.5 4 30
ECSP
100
11.2 4 70
100
1.2 × 0.8 12.5 4 40
100
11.2 4 70
1.5
1.1
1.5
1.5
1.3
1.5
10.5 2SC5645
SBFP420
2SC5645
2SC5781
2SC5782
2SC5781
17
10.5
8.5
10.5
8.5
EC3H07B
Buffer ECSP 100
1.0 × 0.6 12.5 4 30
EC3H10B ECSP 100
1.0 × 0.6 12.5 4 40
2SC5646 SSFP 100
1.4 × 0.8 10 4 30
2SC5782 SSFP 100
1.4 × 0.8 12.5 4 40
1.5
1.3
1.5
1.3
10.5
8.5
9.5
8.5
Notes
SPM3220
SPM3211: Reverse control IC of SPM3212
SPM3215: Single control IC
SPM3226: Reverse control IC of SPM3227
Switch ECSP
Type No.Usage Package Size
(mm) Notes
26
1.2 × 0.8
2.1 × 2.0
3**16 **0.5
Isolation
typ.(dB)
Control
Voltage
(V)
Insertion Loss
typ.(dB)
0.4 to 2.5 GHz Use
0.4
to 2.5 GHz Use
0.4
to 2.5 GHz Use
0.4
to 2.5 GHz Use
0.4
to 2.5 GHz Use
0.4
to 2.5 GHz Use
Up to 6 GHz Use
SPM3226 ECSP 22(2.8V)
1.2 × 0.8 2.4
to 5**18 **0.35
SPM3227 ECSP 22(2.8V)
1.2 × 0.8 2.4
to 5**18 **0.35
SPM3211 MCPH6 28
2.1 × 2.0 3 **16 **0.55
SPM3212 MCPH6 28
2.1 × 2.0 3**16 **0.55
SPM3215 MCPH6 26
3**13 **1.1
SPM3501 MCPH6 20
2.1 × 2.0 3 13 1.0
Pin1dB
typ.(dBm)
** Measured frequency: 2.5 GHz Measured frequency: 1 to 2.5 GHz
Measured frequency: 5.8 GHz Measured frequency: 5 to 6 GHz
● GaAs MMIC products for Antenna switches, local switches and other switches
SCH1302 SCH6
Type No. Package Size
(mm)
410
1.6 × 1.6 20
VDSS
(V)
Pch
SCH2601(Pch)
(Nch)
SCH6 40
30
1.6 × 1.6 30
30
Pch+Nch
SCH2602(Pch)
(Nch)
SCH6 160
7
1.6 × 1.6 12
30
Pch+Nch
3LP03M MCP 40
2.1 × 2.0 30 Pch
2
I
D
(A)
0.4
0.7
1.5
0.35
250m
0.39
RDS(on)
VGS=1.5V
Max. (Ω)
0.67
0.22
RDS(on)
VGS=2.5V
Max. (Ω)
2.8
1.15
0.47
5.2
2.8
*0.165
RDS(on)
VGS=4.5V
Max. (Ω)
*1.9
*0.9
0.31
*3.7
*1.9
Ciss
typ(pF) Polarity
3LN03M MCP 30
2.1 × 2.0 30 Nch
MCH3411 MCPH6 270
2.1 × 2.0 30 Nch
MCH6305 MCPH6 680
2.1 × 2.0 20 Pch
MCH6307 MCPH6 940
2.1 × 2.0 12 Pch
350m
3
4
5
98m
1.15
118m
98m
66m
*0.9
*90m
65m
46m
CPH6311 CPH6 1230
2.8 × 2.9 20 Pch
ECH8603 ECH8 800
2.8 × 2.9 20 Pch Dual
ECH8611 ECH8 1230
2.8 × 2.9 12 Pch Dual
VEC2302 VEC8 510
2.8 × 2.9 30 Pch Dual
5
4
5
3
60m
87m
65m
42m
54m
40m
168m
VEC2303
*VGS=4V, VGS=1.8V
VEC8 940
2.8 × 2.9 12 Pch Dual
4
107m75m49m
MCH5801 MCPH5 0.45
2.1 × 2.0
12
1.5 0.8 200
MCH5815 MCPH5 0.45
2.1 × 2.0
20
1.5 0.8 200
CPH5802 CPH5 0.4
2.8 × 2.9 20 2 0.9 500
CPH5811 CPH5 0.4
2.8 × 2.9 20 3 0.9 500
0.5
0.5
1
1
280m
450m
200m
82m
15
15
15
15
Type No. Package Size
(mm) ID
(A)
VDSS
(V) PD
(W)
IO
(A)
RDS(on)
VGS=2.5V
max. (Ω)
VRRM
(V) VF
max. (V) IR
max. ( µ A)
SS1003EJ ECSP
Type No. Package Size
(mm) Notes
0.45
1.6 × 0.8
2.1 × 2.0
30 1 5
IO
(A)
VRRM
(V) IFSM (A)
360
SB1003EJ ECSP 0.55
1.6 × 0.8 30 1 5 15
S0503SH SCH6 0.47
1.6 × 1.6 30 0.5 5 120
SS1003M MCPH6 0.45
2.1 × 2.0 30 1 5 15
SB1003M MCPH6 0.55
2.1 × 2.0 30 1515
SBS004M MCPH3 0.4
15 1 10 500
SBS808M MCPH5 Parallel type
0.43
2.1 × 2.0 15 1 10 90
VF
max. (V) IR
max. (µA)
15C01S SMCP
Type No. Package Size
(mm)
NPN
Porality
300 to 800
1.6 × 1.6
2.1 × 2.0
15 0.6 0.2
IC
(A)
VCEO
(V) PC (W)
300
30C02S SMCP NPN
300 to 800
1.6 × 1.6 15 0.8 0.2 280
SCH2101 SCH6 PNP
300 to 800
1.6 × 1.6 12 0.8 0.4 240
SCH2201 SCH6 NPN+NPN
300 to 800
1.6 × 1.6 15 0.8 0.4 280
SCH2503(PNP)
(NPN) SCH6 PNP+NPN
200 to 500
300 to 800
1.6 × 1.6 30
30
0.6
0.6
0.4
0.4 220
190
MCH3106 MCPH3 PNP
200 to 560
12 3 0.8 165
MCH3206 MCPH3 NPN
200 to 560
2.1 × 2.0 15 3 0.8 150
CPH3109 CPH3 PNP
200 to 560
2.8 × 2.9 30 3 0.9 230
CPH3209 CPH3 NPN
200 to 560
2.8 × 2.9 30 3 0.9 180
hFE
Min. to Max. VCE (sat)
Max. (mV)
As miniaturization and efficiency advance and improve in portable equipment, the needs for further miniaturization and lower
power consumption in discrete devices are increasing even faster.
SANYO responds to these needs by providing an extensive line of products that contribute to reduced mounting areas and
reduced parts counts in application circuits
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SANYO's Lineup of High-Reliability
Discrete Devices
38 39
Power MOSFETs+ Schottky Barrier Diodes for logic block
Ultralow on-resintance Power MOSFETs for RF and logic block
Low saturation voltage transistors for logic block
Schottky Barrier Diodes for logic block
Microwave Device Series