More Data Even Faster. Supporting Needs for Higher Performance with Peripheral Components

SANYO's Lineup of High-Reliability Discrete Devices

FETs for Cell phone ECM

SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets. SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data due to the inclusion of high pixel count cameras in this equipment.

Digital Cell Phone 0.8 GHz, 1.5 GHz

Inner antenna

Low-noise amplifier

Thin-form package technology Gold loop and new software (M loop)

Gold loop and new software MAXm 100

High signal-to-noise ratio technology

JFET noise component

Condenser microphone JFET structure

Drain

 

Drain pad

JFET

Protective

 

diode static

Source pad

voltage

Whip antenna

Antenna switches( GaAs MMIC)

 

 

 

 

SPM3212

 

 

 

 

SPM3215

 

Buffer amplifiers

SPM3220

 

EC3H10B

SPM3226

 

FS303

Filter switches

 

FS304

(GaAs MMIC)

 

 

 

 

SPM3212

 

 

 

 

SPM3220

 

 

 

 

Power amplifier SPM3226

 

 

 

 

OSC(NPN BiP)

EC3H09B, EC3H07B SBFP420B

Local switches

SPM3212

SPM3220

SPM3226

 

φ20m

Earlier software: the chip and wire

Gold loop

were shorted together

 

WB loop height: 150 m maximum reduced to 100 m maximum

 

workaround

 

Gate

 

Polysilicon resistor

Gate sub

transient characteristics

workaround

Source

The high resistance polysilicon resistor (1 to 3 G) used to stabilized the gate-source

Antenna switch

Baseband logic

Thinner island frame and improved frame bending process

SSFP

 

VSFP

VTFP

1.41.40.6 mm

 

1.21.40.46 mm

1.21.40.34 mm

Fame

 

 

 

thickness

Thinner

 

Ultrathinner

120 m

 

 

Fame

 

 

thickness

Fame

potential accounts for a large portion of the JFET noise component.

 

 

 

Result

 

 

 

-106

 

 

0.14

2 G

 

-106.5

 

 

0.12

voltage (dBV)

Smaller

Gatevoltage (V)

25 G

-107

 

0.10

90 G

 

 

-107.5

 

0.08

 

-108

 

0.06

 

-108.5

 

0.04

 

CDMA/TDMA (IS136)

(Pch MOS)

Li-ion

(Pch MOS)

Battery

MCH6305/MCH6307

(Pch MOS)

MCH6305/MCH6307

ECH8603

ECH8603

ECH8601

 

 

 

ECH8603

 

 

 

 

70 m

thickness

 

 

70 m

 

 

Frame bend width

 

 

 

 

Frame bend width

 

 

 

 

 

 

 

 

130 m

 

 

 

 

100 m

 

 

 

Frame bend width

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50 m

 

 

 

 

Island frame thickness:

Total reduction: 130 ￿m !

 

 

Reduced by 50

m !

 

 

Frame bending process:

 

 

 

 

 

 

 

 

Reduced by 80

m !

 

 

 

 

 

 

Noise

-109

 

Larger

 

 

 

 

 

0.02

 

 

 

 

 

 

-109.5

 

 

 

 

 

 

 

 

0.00

 

 

 

 

 

 

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.50

4.00

0

2

4

6

8

10

 

 

 

 

 

RGS (G)

 

 

 

 

Potential stabilization time (s)

 

Development

Ext.

Inner antenna

Low-noise amplifier

Filter

 

 

 

 

Mixer

 

 

 

Diversity switches

 

 

 

 

 

 

 

 

 

(GaAs MMIC)

 

Filter switches for TDMA

 

Antenna

SPM3212

 

 

 

OSC(NPN BiP)

(GaAs MMIC)

 

SPM3215

 

 

 

 

 

 

SPM3220

 

EC3H09B

SPM3211

 

 

SPM3226

 

EC3H07B

SPM3212

 

 

 

 

SBFP420B

 

Establishment of and ultrathin wafer process (4 inch)

Introduction of B/G plus spin etching process!!

Factor workaround

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Target thickness: 80 m

 

Target thickness: 80 m

 

Target thickness: 80 m

 

Spin etching process

B/G

 

Spin etching process

Spin etching

 

 

thickness: 40 m

 

 

thickness: 40 m

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B/G process thickness: 350 m

SANYO established an 80 m ultrathin wafer process by improving the wafer chamfering shape and introducing spin etching !!!

Improved signal-to-noise ratio due to p-channel MOSFET development

 

 

 

VDD

Input protection

 

VDD protection resistor

300‰

diode

GND

VDD

 

 

 

VIN

1k‰

 

VIN

Pch MOSFET

 

Input protection

L / W = 3 m / 1 mm

 

resistor

 

 

 

 

 

GND

 

 

Effect

 

 

Buffer amplifiers

Local switches

 

 

(NPN BiP)

(GaAs MMIC)

Filter switches for TDMA

 

EC3H10B

SPM3212

(GaAs MMIC)

 

FS303

SPM3220

SPM3212

 

FS304

SPM3226

SPM3220

Antenna switch

Duplexer

 

SPM3226

 

 

 

PA module

 

 

Filter switches for PCS and TDMA

SPM3212, SPM3220, SPM3226

Total package height

SSFP

VSFP

VTFP

mm

mm

mm

 

Noise voltage (dBV)

Insertion loss (dBV)

Signal-to-noise ratio (dB)

Signal-to-noise ratio evaluation

Pch MOSFET

-113 to -114

-5.0 to -5.5

68 to 68.5

 

JFET

-105 to -107

-1.5 to -3.5

62 to 64

 

 

 

Potential stabilization time

Enhancement mode

 

0.5

(V)

0.4

P-ch MOSFET

 

 

 

Potential stabilization time

 

0.3

PHS

Inner antenna

Low-noise amplifiers

0.6

Thinner

0.46

Ultrathinner

0.34

 

 

SANYO achieved extremely thin packages by combining of the above technologies.

Voltage

0.2

 

 

 

 

 

 

Vin

0.1

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

0

0.5

1

1.5

2

2.5

3

 

 

 

 

Time (s)

 

 

 

The potential stabilization time becomes under 1 second in enhancement mode p-channel MOSFETs.

Antenna

EC3H07B EC3H10B

SBFP405B SBFP420B

SBFP540B

Buffer amplifiers

Diversity switch(NPN BiP)

EC3H07B

FS303

Antenna switches

SPM3212 SPM3215

SPM3220 SPM3226

Power amplifier

Local switches (NPN BiP)

SPM3212

SPM3220

SPM3226

OSC EC3H09B

EC3H07B

SBFP420B

Li-ion battery

Baseband logic

CPH3106(PNP Bip.),

CPH3106(PNP Bip.)

MCH3106(PNP Bip.)

MCH3106(PNP Bip.)

MCH6305(Pch MOS)

MCH6305(Pch MOS)

MCH6307(Pch MOS)

 

36

 

37

 

 

 

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Sanyo EP92H manual FETs for Cell phone ECM, Digital Cell Phone 0.8 GHz, 1.5 GHz