More Data Even Faster. Supporting Needs for Higher Performance with Peripheral Components
SANYO's Lineup of High-Reliability Discrete Devices
FETs for Cell phone ECM
SANYO supplies
Digital Cell Phone 0.8 GHz, 1.5 GHz
Inner antenna
Gold loop and new software MAXm 100
High signal-to-noise ratio technology
JFET noise component
Condenser microphone JFET structure
Drain
| Drain pad |
JFET | Protective |
| diode static |
Source pad | voltage |
Whip antenna
Antenna switches( GaAs MMIC) |
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SPM3212 |
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SPM3215 |
| Buffer amplifiers | ||
SPM3220 |
| EC3H10B | ||
SPM3226 |
| FS303 | ||
Filter switches |
| FS304 | ||
(GaAs MMIC) |
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SPM3212 |
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SPM3220 |
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Power amplifier SPM3226 |
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OSC(NPN BiP)
EC3H09B, EC3H07B SBFP420B
Local switches
SPM3212
SPM3220
SPM3226
| φ20∝m |
Earlier software: the chip and wire | Gold loop |
were shorted together |
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WB loop height: 150 m maximum → reduced to 100 m maximum
| workaround |
| Gate |
| Polysilicon resistor |
Gate sub | transient characteristics |
workaround | Source |
The high resistance polysilicon resistor (1 to 3 GΩ) used to stabilized the
Antenna switch
Baseband logic
Thinner island frame and improved frame bending process
SSFP |
| VSFP | VTFP |
1.4✕1.4✕0.6 mm |
| 1.2✕1.4✕0.46 mm | 1.2✕1.4✕0.34 mm |
Fame |
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thickness | Thinner |
| Ultrathinner |
120 m |
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| Fame | ||
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| thickness | Fame |
potential accounts for a large portion of the JFET noise component.
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| 0.14 | 2 GΩ | |
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| 0.12 | ||
voltage (dBV) | Smaller | Gatevoltage (V) | 25 GΩ | ||
| 0.10 | 90 GΩ | |||
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| 0.08 |
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| 0.06 |
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| 0.04 |
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CDMA/TDMA (IS136)
(Pch MOS) | (Pch MOS) | ||
Battery | |||
MCH6305/MCH6307 | (Pch MOS) | MCH6305/MCH6307 | |
ECH8603 | ECH8603 | ||
ECH8601 | |||
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| ECH8603 |
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70 m | thickness | |
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| Frame bend width |
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| Frame bend width |
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| 130 m |
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| 100 m |
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| 50 m |
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| Island frame thickness: | Total reduction: 130 m ! | |||||||||||
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| Reduced by 50 | m ! | |||||||||||
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| Frame bending process: |
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| Reduced by 80 | m ! |
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Noise |
| Larger |
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| 0.02 |
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| 0.00 | 0.50 | 1.00 | 1.50 | 2.00 | 2.50 | 3.00 | 3.50 | 4.00 | 0 | 2 | 4 | 6 | 8 | 10 |
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| RGS (GΩ) |
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| Potential stabilization time (s) |
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Development
Ext. | Inner antenna | Filter |
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| Mixer |
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| Diversity switches |
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| Filter switches for TDMA | |
| Antenna | SPM3212 |
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| OSC(NPN BiP) | (GaAs MMIC) | ||
| SPM3215 |
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| SPM3220 |
| EC3H09B | SPM3211 |
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| SPM3226 |
| EC3H07B | SPM3212 |
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| SBFP420B |
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Establishment of and ultrathin wafer process (4 inch)
Introduction of B/G plus spin etching process!!
Factor workaround
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Target thickness: 80 ∝m |
| Target thickness: 80 ∝m |
| Target thickness: 80 ∝m | ||||||||||||
| Spin etching process | B/G |
| Spin etching process | Spin etching |
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| thickness: 40 ∝m |
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| thickness: 40 ∝m |
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B/G process thickness: 350 ∝m
SANYO established an 80 ∝m ultrathin wafer process by improving the wafer chamfering shape and introducing spin etching !!!
Improved
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| VDD |
Input protection |
| VDD protection resistor | 300‰ |
diode | GND | VDD |
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| VIN | 1k‰ |
| VIN | Pch MOSFET |
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Input protection | L / W = 3 ∝m / 1 mm |
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resistor |
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| GND |
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| Buffer amplifiers | Local switches |
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| (NPN BiP) | (GaAs MMIC) | Filter switches for TDMA |
| EC3H10B | SPM3212 | (GaAs MMIC) |
| FS303 | SPM3220 | SPM3212 |
| FS304 | SPM3226 | SPM3220 |
Antenna switch | Duplexer |
| SPM3226 |
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| PA module |
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Filter switches for PCS and TDMA
SPM3212, SPM3220, SPM3226
Total package height
SSFP | VSFP | VTFP |
mm | mm | mm |
| Noise voltage (dBV) | Insertion loss (dBV) | ||
Pch MOSFET | 68 to 68.5 |
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JFET | 62 to 64 |
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| Potential stabilization time | |
Enhancement mode |
| 0.5 | |
(V) | 0.4 | ||
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Potential stabilization time |
| 0.3 |
PHS
Inner antenna
0.6 | Thinner | 0.46 | Ultrathinner | 0.34 |
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SANYO achieved extremely thin packages by combining of the above technologies.
Voltage | 0.2 |
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Vin | 0.1 |
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| 0 | 0.5 | 1 | 1.5 | 2 | 2.5 | 3 |
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| Time (s) |
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The potential stabilization time becomes under 1 second in enhancement mode
Antenna
EC3H07B EC3H10B
SBFP405B SBFP420B
SBFP540B
Buffer amplifiers
Diversity switch(NPN BiP)
EC3H07B
FS303
Antenna switches
SPM3212 SPM3215
SPM3220 SPM3226
Power amplifier
Local switches (NPN BiP)
SPM3212
SPM3220
SPM3226
OSC EC3H09B
EC3H07B
SBFP420B
Baseband logic | |
CPH3106(PNP Bip.), | CPH3106(PNP Bip.) |
MCH3106(PNP Bip.) | MCH3106(PNP Bip.) |
MCH6305(Pch MOS) | MCH6305(Pch MOS) |
MCH6307(Pch MOS) |
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36 |
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