Silicon Laboratories SI4734/35-B20 Electrical Specifications, Recommended Operating Conditions

Si4734/35-B20

1. Electrical Specifications

Table 1. Recommended Operating Conditions

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Supply Voltage	VDD		2.7	—	5.5	V
Interface Supply Voltage	VIO		1.5	—	3.6	V
Power Supply Powerup Rise Time	VDDRISE		10	—	—	µs
Interface Power Supply Powerup Rise Time	VIORISE		10	—	—	µs
Ambient Temperature	TA		–20	25	85	°C
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at VDD = 3.3 V and 25 °C unless otherwise stated. Parameters are tested in production unless
otherwise stated.

Table 2. Absolute Maximum Ratings1,2

Parameter	Symbol	Value		Unit
Supply Voltage	VDD	–0.5 to	5.8	V
Interface Supply Voltage	VIO	–0.5 to	3.9	V
Input Current3	IIN	10		mA
Input Voltage3	VIN	–0.3 to (VIO + 0.3)		V
Operating Temperature	TOP	–40 to	95	°C
Storage Temperature	TSTG	–55 to 150		°C
RF Input Level4		0.4		VpK

Notes:

1.Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended operating conditions for extended periods may affect device reliability.

2.The Si4734/35 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.

3.For input pins SCLK, SEN, SDIO, RST, RCLK, DCLK, DFS, GPO1, GPO2, and GPO3.

4.At RF input pins, FMI and AMI.

4 Rev. 1.0