Silicon Laboratories SI4734/35-B20 manual Wire Control Interface Characteristics1,2,3, Start

Si4734/35-B20

Table 5. 2-Wire Control Interface Characteristics1,2,3

(VDD = 2.7 to 5.5 V, VIO = 1.5 to 3.6 V, TA = –20 to 85 °C)

Parameter	Symbol	Test Condition		Min		Typ	Max	Unit
SCLK Frequency	fSCL			0		—	400	kHz
SCLK Low Time	tLOW			1.3		—	—	µs
SCLK High Time	tHIGH			0.6		—	—	µs
SCLK Input to SDIO ↓ Setup	tSU:STA			0.6		—	—	µs
(START)
SCLK Input to SDIO ↓ Hold (START)	tHD:STA			0.6		—	—	µs
SDIO Input to SCLK ↑ Setup	tSU:DAT			100		—	—	ns
SDIO Input to SCLK ↓ Hold4,5	tHD:DAT			0		—	900	ns
SCLK input to SDIO ↑ Setup (STOP)	tSU:STO			0.6		—	—	µs
STOP to START Time	tBUF			1.3		—	—	µs
SDIO Output Fall Time	tf:OUT				Cb	—	250	ns
			20	+ 0.1
					----------
					1pF
SDIO Input, SCLK Rise/Fall Time	tf:IN					—	300	ns
	tr:IN		20	+ 0.1	Cb
					----------
					1pF
SCLK, SDIO Capacitive Loading	Cb			—		—	50	pF
Input Filter Pulse Suppression	tSP			—		—	50	ns

Notes:

1.When VIO = 0 V, SCLK and SDIO are low impedance.

2.When selecting 2-wire mode, the user must ensure that a 2-wire start condition (falling edge of SDIO while SCLK is high) does not occur within 300 ns before the rising edge of RST.

3.When selecting 2-wire mode, the user must ensure that SCLK is high during the rising edge of RST, and stays high until after the first start condition.

4.The Si4734/35 delays SDIO by a minimum of 300 ns from the VIH threshold of SCLK to comply with the minimum tHD:DAT specification.

5.The maximum tHD:DAT has only to be met when fSCL = 400 kHz. At frequencies below 400 KHz, tHD:DAT may be violated as long as all other timing parameters are met.

Rev. 1.0 7