Cypress CY62138CV33, CY62138CV30 manual Features, Logic Block Diagram Functional Description

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CY62138FV30 MoBL®

2-Mbit (256K x 8) Static RAM

Features

•Very high speed: 45 ns

•Wide voltage range: 2.20V–3.60V

•Pin compatible with CY62138CV25/30/33

•Ultra low standby power

—Typical standby current: 1 ∝A

—Maximum standby current: 5 ∝A

•Ultra low active power

—Typical active current: 1.6 mA @ f = 1 MHz

•Easy memory expansion with CE1, CE2, and OE features

•Automatic power down when deselected

•CMOS for optimum speed and power

•Offered in Pb-free 36-ball VFBGA, 32-pin TSOP II, 32-pin SOIC, 32-pin TSOP I and 32-pin STSOP packages

Logic Block Diagram

Functional Description [1]

The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL→) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Place the device into standby mode reducing power consumption when deselected (CE1 HIGH or CE2 LOW).

To write to the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Write Enable (WE) inputs LOW. Data on the eight IO pins (IO0 through IO7) is then written into the location specified on the address pins (A0 through A17).

To read from the device, take Chip Enable (CE1 LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the IO pins.

The eight input and output pins (IO0 through IO7) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or during a write operation (CE1 LOW and CE2 HIGH and WE LOW).

 

 

A0

DATA IN DRIVERS

 

IO0

 

 

A1

 

 

 

 

 

 

 

IO

 

 

A2

 

 

 

 

 

 

 

1

 

 

DECODERROW

 

 

 

 

 

AMPSSENSE

 

 

 

A3

 

 

 

 

 

IO

 

 

A4

 

 

 

 

 

 

 

2

 

 

A5

 

256K x 8

 

 

IO

 

 

A6

 

 

 

 

 

 

 

3

 

 

A7

 

 

ARRAY

 

 

 

IO4

 

 

A8

 

 

 

 

 

 

 

IO5

 

 

A9

 

 

 

 

 

 

 

 

 

A10

 

 

 

 

 

 

 

 

CE1

 

A11

 

 

 

 

 

 

 

IO6

 

 

 

 

 

 

 

 

 

IO7

CE2

WE

 

COLUMN DECODER

POWER

 

 

 

 

 

 

 

 

DOWN

 

 

OE

 

12

13

14

15

16

17

 

 

 

 

 

 

 

 

 

 

A

A

A

A

A

A

 

 

Note

1. For best practice recommendations, refer to the Cypress application note “System Design Guidelines” at http://www.cypress.com.

Cypress Semiconductor Corporation

• 198 Champion Court • San Jose, CA 95134-1709

•

408-943-2600

Document #: 001-08029 Rev. *E

Revised March 26, 2007

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Contents Logic Block Diagram Functional Description FeaturesCypress Semiconductor Corporation Product Portfolio Pin ConfigurationMaximum Ratings Electrical Characteristics Over the Operating RangeProduct Range Ambient Parameter Description Test Conditions Max UnitThermal Resistance Data Retention Characteristics Over the Operating RangeAC Test Loads and Waveforms Data Retention WaveformRead Cycle Parameter Description 45 ns Unit MinWrite Cycle Read Cycle No OE controlled 10, 16 Switching WaveformsWrite Cycle No WE controlled 10, 14, 18 Truth Table Inputs/Outputs Mode PowerOrdering Information Package DiagramsPin Tsop II Pin 450 Mil Molded Soic Pin Tsop I 8 x 20 mm Pin Stsop 8 x 13.4 mm Document History Issue Orig. Description of Change Date

CY62138CV25, CY62138CV30, CY62138FV30, CY62138CV33 specifications

The Cypress CY62138 series, which includes the CY62138CV30, CY62138CV33, CY62138CV25, and CY62138FV30, represents a family of high-performance CMOS Static Random Access Memory (SRAM) devices. These components are widely utilized in various applications due to their speed, density, and reliability.

One of the key features of the CY62138 series is its memory density. These SRAMs provide 2Megwords x 8Bit (2M x 8) configurations, making them suitable for applications that require substantial memory capacity without the complexities associated with dynamic RAM technologies. The components are built using advanced CMOS technology, which enables low power consumption while maintaining high-speed performance.

The devices in this series operate under a voltage range of 2.7V to 3.6V for the CY62138CV models and can operate at clock speeds of 30ns, 33ns, and 25ns, depending on the specific variant. The CY62138FV30 variant, optimized for fast operation, can achieve access times as low as 30ns. This speed is particularly advantageous in applications such as buffering, caching, and other scenarios where rapid data access is critical.

Another prominent feature is the CY62138 series' support for a straightforward interface, which simplifies design integration. The SRAMs boast a asynchronous operation that eliminates the need for complex timing requirements, thereby easing the design process for engineers. The devices support both byte and word access modes, providing flexibility in handling data.

In terms of reliability, the CY62138 SRAMs are designed to operate over an extensive temperature range, making them suitable for harsh environments. They also feature a write protection mechanism, ensuring that data integrity is maintained during unexpected power fluctuations.

In summary, the Cypress CY62138 series combines high density, rapid access times, low power consumption, and robust reliability features, making it a highly effective choice for a wide range of applications, including telecommunications, industrial control systems, and consumer electronics. As technology evolves, devices from this series continue to meet the demands for reliable, high-speed memory solutions in various sectors.
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