Cypress CY62138FV30, CY62138CV30, CY62138CV33, CY62138CV25 Truth Table, Inputs/Outputs Mode Power

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CY62138FV30 MoBL®

Switching Waveforms (continued)

Write Cycle No. 2 (CE1 or CE2 controlled) [10, 14, 18, 19]

 

tWC

 

ADDRESS

 

 

CE

tSCE

 

 

 

 

tSA

 

 

tAW

tHA

 

tPWE

 

WE

 

 

 

tSD

tHD

DATA IO

DATA VALID

 

 

 

Write Cycle No. 3 (WE controlled, OE LOW) [10, 19]

 

 

tWC

 

ADDRESS

 

 

 

 

 

tSCE

 

CE

 

 

 

 

tAW

 

tHA

 

tSA

tPWE

 

WE

 

 

 

 

 

tSD

tHD

DATA IO

NOTE 20

DATA VALID

 

 

tHZWE

 

tLZWE

Truth Table

CE1

CE2

WE

OE

Inputs/Outputs

Mode

Power

H

X

X

X

High-Z

Deselect/Power Down

Standby (ISB)

X

L

X

X

High-Z

Deselect/Power Down

Standby (ISB)

L

H

H

L

Data Out

Read

Active (ICC)

L

H

H

H

High-Z

Output Disabled

Active (ICC)

L

H

L

X

Data in

Write

Active (ICC)

Document #: 001-08029 Rev. *E

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Contents Logic Block Diagram Functional Description FeaturesCypress Semiconductor Corporation Product Portfolio Pin ConfigurationParameter Description Test Conditions Max Unit Electrical Characteristics Over the Operating RangeMaximum Ratings Product Range AmbientData Retention Waveform Data Retention Characteristics Over the Operating RangeThermal Resistance AC Test Loads and WaveformsRead Cycle Parameter Description 45 ns Unit MinWrite Cycle Read Cycle No OE controlled 10, 16 Switching WaveformsWrite Cycle No WE controlled 10, 14, 18 Truth Table Inputs/Outputs Mode PowerOrdering Information Package DiagramsPin Tsop II Pin 450 Mil Molded Soic Pin Tsop I 8 x 20 mm Pin Stsop 8 x 13.4 mm Document History Issue Orig. Description of Change Date

CY62138CV25, CY62138CV30, CY62138FV30, CY62138CV33 specifications

The Cypress CY62138 series, which includes the CY62138CV30, CY62138CV33, CY62138CV25, and CY62138FV30, represents a family of high-performance CMOS Static Random Access Memory (SRAM) devices. These components are widely utilized in various applications due to their speed, density, and reliability.

One of the key features of the CY62138 series is its memory density. These SRAMs provide 2Megwords x 8Bit (2M x 8) configurations, making them suitable for applications that require substantial memory capacity without the complexities associated with dynamic RAM technologies. The components are built using advanced CMOS technology, which enables low power consumption while maintaining high-speed performance.

The devices in this series operate under a voltage range of 2.7V to 3.6V for the CY62138CV models and can operate at clock speeds of 30ns, 33ns, and 25ns, depending on the specific variant. The CY62138FV30 variant, optimized for fast operation, can achieve access times as low as 30ns. This speed is particularly advantageous in applications such as buffering, caching, and other scenarios where rapid data access is critical.

Another prominent feature is the CY62138 series' support for a straightforward interface, which simplifies design integration. The SRAMs boast a asynchronous operation that eliminates the need for complex timing requirements, thereby easing the design process for engineers. The devices support both byte and word access modes, providing flexibility in handling data.

In terms of reliability, the CY62138 SRAMs are designed to operate over an extensive temperature range, making them suitable for harsh environments. They also feature a write protection mechanism, ensuring that data integrity is maintained during unexpected power fluctuations.

In summary, the Cypress CY62138 series combines high density, rapid access times, low power consumption, and robust reliability features, making it a highly effective choice for a wide range of applications, including telecommunications, industrial control systems, and consumer electronics. As technology evolves, devices from this series continue to meet the demands for reliable, high-speed memory solutions in various sectors.