Cypress CY62138FV30 manual Maximum Ratings, Electrical Characteristics Over the Operating Range

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CY62138FV30 MoBL®

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

Power Applied

55°C to +125°C

Supply Voltage to Ground

 

Potential

–0.3V to 3.9V

DC Voltage Applied to Outputs

 

in High-Z State [4, 5]

–0.3V to 3.9V

DC Input Voltage [4, 5]

 

–0.3V to 3.9V

Output Current into Outputs (LOW)

20 mA

Static Discharge Voltage

 

 

> 2001V

(MIL-STD-883, Method 3015)

 

 

 

 

Latch-up Current

 

 

 

> 200 mA

 

 

 

 

 

 

Product

Range

Ambient

 

VCC

[6]

Temperature

 

 

CY62138FV30LL

Industrial

–40°C to +85°C

 

2.2V to 3.6V

 

 

 

 

 

 

Electrical Characteristics (Over the Operating Range)

Parameter

Description

 

 

Test Conditions

 

45 ns

 

Unit

 

 

 

 

 

 

 

 

Min

Typ [3]

 

Max

 

 

 

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

 

IOH = –0.1 mA

 

2.0

 

 

 

V

 

 

 

IOH = –1.0 mA, VCC > 2.70V

2.4

 

 

 

V

VOL

Output LOW Voltage

 

IOL = 0.1 mA

 

 

 

 

0.4

V

 

 

 

IOL = 2.1 mA, VCC > 2.70V

 

 

 

0.4

V

VIH

Input HIGH Voltage

VCC = 2.2V to 2.7V

 

1.8

 

 

VCC + 0.3V

V

 

 

 

VCC= 2.7V to 3.6V

 

2.2

 

 

VCC + 0.3V

V

VIL

Input LOW Voltage

VCC = 2.2V to 2.7V

For BGA package

–0.3

 

 

0.6

V

 

 

 

VCC= 2.7V to 3.6V

 

–0.3

 

 

0.8

V

 

 

 

VCC = 2.2V to 3.6V

For other packages

–0.3

 

 

0.6

V

IIX

Input Leakage Current

GND < VI < VCC

 

–1

 

 

+1

∝A

IOZ

Output Leakage Current

 

GND < VO < VCC,

 

–1

 

 

+1

∝A

 

 

 

output disabled

 

 

 

 

 

 

ICC

VCC Operating Supply Current

f = fmax = 1/tRC

VCC = VCCmax

 

13

 

18

mA

 

 

 

 

IOUT = 0 mA

 

 

 

 

 

 

 

 

f = 1 MHz

 

1.6

 

2.5

 

 

 

 

 

 

 

 

CMOS levels

 

 

 

 

 

ISB1

Automatic CE Power Down

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

1

 

5

∝A

 

CE

 

 

Current CMOS Inputs

 

VIN > VCC – 0.2V, VIN < 0.2V),

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = fmax (address and data only),

 

 

 

 

 

 

 

 

f = 0 (OE, and

 

 

 

 

 

 

 

 

 

 

 

WE), VCC = 3.60V

 

 

 

 

 

ISB2 [7]

Automatic CE Power Down

 

 

1 > VCC – 0.2V or CE2 < 0.2V,

 

1

 

5

∝A

 

CE

 

 

Current CMOS Inputs

 

VIN > VCC – 0.2V or VIN < 0.2V,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 0, VCC = 3.60V

 

 

 

 

 

 

Capacitance (For all packages) [8]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

10

pF

 

 

VCC = VCC(typ.)

 

 

COUT

Output Capacitance

10

pF

Notes

4.VIL(min) = –2.0V for pulse durations less than 20 ns.

5.VIH(max) = VCC+0.75V for pulse durations less than 20 ns.

6.Full device AC operation assumes a 100 ∝s ramp time from 0 to VCC(min) and 200 ∝s wait time after VCC stabilization.

7.Only chip enables (CE1 and CE2) must be at CMOS level to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

8.Tested initially and after any design or process changes that may affect these parameters.

Document #: 001-08029 Rev. *E

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Contents Features Logic Block Diagram Functional DescriptionCypress Semiconductor Corporation Product Portfolio Pin ConfigurationParameter Description Test Conditions Max Unit Electrical Characteristics Over the Operating RangeMaximum Ratings Product Range AmbientData Retention Waveform Data Retention Characteristics Over the Operating RangeThermal Resistance AC Test Loads and WaveformsParameter Description 45 ns Unit Min Read CycleWrite Cycle Switching Waveforms Read Cycle No OE controlled 10, 16Write Cycle No WE controlled 10, 14, 18 Truth Table Inputs/Outputs Mode PowerOrdering Information Package DiagramsPin Tsop II Pin 450 Mil Molded Soic Pin Tsop I 8 x 20 mm Pin Stsop 8 x 13.4 mm Document History Issue Orig. Description of Change Date

CY62138CV25, CY62138CV30, CY62138FV30, CY62138CV33 specifications

The Cypress CY62138 series, which includes the CY62138CV30, CY62138CV33, CY62138CV25, and CY62138FV30, represents a family of high-performance CMOS Static Random Access Memory (SRAM) devices. These components are widely utilized in various applications due to their speed, density, and reliability.

One of the key features of the CY62138 series is its memory density. These SRAMs provide 2Megwords x 8Bit (2M x 8) configurations, making them suitable for applications that require substantial memory capacity without the complexities associated with dynamic RAM technologies. The components are built using advanced CMOS technology, which enables low power consumption while maintaining high-speed performance.

The devices in this series operate under a voltage range of 2.7V to 3.6V for the CY62138CV models and can operate at clock speeds of 30ns, 33ns, and 25ns, depending on the specific variant. The CY62138FV30 variant, optimized for fast operation, can achieve access times as low as 30ns. This speed is particularly advantageous in applications such as buffering, caching, and other scenarios where rapid data access is critical.

Another prominent feature is the CY62138 series' support for a straightforward interface, which simplifies design integration. The SRAMs boast a asynchronous operation that eliminates the need for complex timing requirements, thereby easing the design process for engineers. The devices support both byte and word access modes, providing flexibility in handling data.

In terms of reliability, the CY62138 SRAMs are designed to operate over an extensive temperature range, making them suitable for harsh environments. They also feature a write protection mechanism, ensuring that data integrity is maintained during unexpected power fluctuations.

In summary, the Cypress CY62138 series combines high density, rapid access times, low power consumption, and robust reliability features, making it a highly effective choice for a wide range of applications, including telecommunications, industrial control systems, and consumer electronics. As technology evolves, devices from this series continue to meet the demands for reliable, high-speed memory solutions in various sectors.
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