Cypress CY62138CV25, CY62138CV30 manual Switching Waveforms, Read Cycle No OE controlled 10, 16

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CY62138FV30 MoBL®

Switching Waveforms

Read Cycle 1 (Address transition controlled) [15, 16]

tRC

ADDRESS

tAA

tOHA

DATA OUT

PREVIOUS DATA VALID

Read Cycle No. 2 (OE controlled) [10, 16, 17]

DATA VALID

ADDRESS

 

 

 

 

 

tRC

 

CE

 

 

 

 

tACE

 

 

OE

 

tHZOE

 

 

tDOE

 

 

tHZCE

 

 

tLZOE

HIGH

DATA OUT

HIGH IMPEDANCE

DATA VALID

IMPEDANCE

 

 

tLZCE

 

 

 

tPD

 

V

tPU

ICC

CC

50%

 

50%

SUPPLY

 

CURRENT

 

 

ISB

Write Cycle No. 1 (WE controlled) [10, 14, 18, 19]

 

 

tWC

 

ADDRESS

 

 

 

 

 

tSCE

 

CE

 

 

 

 

tAW

 

tHA

 

tSA

tPWE

 

WE

 

 

 

OE

 

 

 

 

 

tSD

t

 

 

 

HD

DATA IO

NOTE 20

DATA VALID

 

 

tHZOE

 

 

Notes:

15.The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.

16.WE is HIGH for read cycle.

17.Address valid before or similar to CE1 transition LOW and CE2 transition HIGH.

18.Data IO is high impedance if OE = VIH.

19.If CE1 goes HIGH or CE2 goes LOW simultaneously with WE HIGH, the output remains in high impedance state.

20.During this period, the IOs are in output state. Do not apply input signals.

Document #: 001-08029 Rev. *E

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Contents Features Logic Block Diagram Functional DescriptionCypress Semiconductor Corporation Pin Configuration Product PortfolioProduct Range Ambient Electrical Characteristics Over the Operating RangeMaximum Ratings Parameter Description Test Conditions Max UnitAC Test Loads and Waveforms Data Retention Characteristics Over the Operating RangeThermal Resistance Data Retention WaveformParameter Description 45 ns Unit Min Read CycleWrite Cycle Switching Waveforms Read Cycle No OE controlled 10, 16Write Cycle No WE controlled 10, 14, 18 Inputs/Outputs Mode Power Truth TablePackage Diagrams Ordering InformationPin Tsop II Pin 450 Mil Molded Soic Pin Tsop I 8 x 20 mm Pin Stsop 8 x 13.4 mm Issue Orig. Description of Change Date Document History

CY62138CV25, CY62138CV30, CY62138FV30, CY62138CV33 specifications

The Cypress CY62138 series, which includes the CY62138CV30, CY62138CV33, CY62138CV25, and CY62138FV30, represents a family of high-performance CMOS Static Random Access Memory (SRAM) devices. These components are widely utilized in various applications due to their speed, density, and reliability.

One of the key features of the CY62138 series is its memory density. These SRAMs provide 2Megwords x 8Bit (2M x 8) configurations, making them suitable for applications that require substantial memory capacity without the complexities associated with dynamic RAM technologies. The components are built using advanced CMOS technology, which enables low power consumption while maintaining high-speed performance.

The devices in this series operate under a voltage range of 2.7V to 3.6V for the CY62138CV models and can operate at clock speeds of 30ns, 33ns, and 25ns, depending on the specific variant. The CY62138FV30 variant, optimized for fast operation, can achieve access times as low as 30ns. This speed is particularly advantageous in applications such as buffering, caching, and other scenarios where rapid data access is critical.

Another prominent feature is the CY62138 series' support for a straightforward interface, which simplifies design integration. The SRAMs boast a asynchronous operation that eliminates the need for complex timing requirements, thereby easing the design process for engineers. The devices support both byte and word access modes, providing flexibility in handling data.

In terms of reliability, the CY62138 SRAMs are designed to operate over an extensive temperature range, making them suitable for harsh environments. They also feature a write protection mechanism, ensuring that data integrity is maintained during unexpected power fluctuations.

In summary, the Cypress CY62138 series combines high density, rapid access times, low power consumption, and robust reliability features, making it a highly effective choice for a wide range of applications, including telecommunications, industrial control systems, and consumer electronics. As technology evolves, devices from this series continue to meet the demands for reliable, high-speed memory solutions in various sectors.