Cypress CY14B102L, nvSRAM manual Features, Functional Description, Logic Block Diagram1, 2

Page 1

PRELIMINARY

CY14B102L, CY14B102N

2 Mbit (256K x 8/128K x 16) nvSRAM

Features

■20 ns, 25 ns, and 45 ns Access Times

■Internally organized as 256K x 8 (CY14B102L) or 128K x 16 (CY14B102N)

■Hands off Automatic STORE on power down with only a small Capacitor

■STORE to QuantumTrap® nonvolatile elements initiated by software, device pin, or AutoStore® on power down

■RECALL to SRAM initiated by software or power up

■Infinite Read, Write, and Recall Cycles

■200,000 STORE cycles to QuantumTrap

■20 year data retention

■Single 3V +20% to -10%operation

■Commercial, Industrial and Automotive Temperatures

■48-ball FBGA and 44/54-pin TSOP - II packages

■Pb-free and RoHS compliance

Functional Description

The Cypress CY14B102L/CY14B102N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 256K bytes of 8 bits each or 128K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Logic Block Diagram[1, 2, 3]

 

 

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Note

 

 

 

 

 

 

1.

Address A0 - A17 for x8 configuration and Address A0

- A16 for x16 configuration.

 

 

 

 

2.

Data DQ0

- DQ7 for x8 configuration and Data DQ0

- DQ15 for x16 configuration.

 

 

 

 

3.

BHE and

BLE are applicable for x16 configuration only.

 

 

 

 

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document #: 001-45754 Rev. *B

 

 

 

Revised November 10, 2008

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Contents Logic Block Diagram1, 2 FeaturesFunctional Description Cypress Semiconductor CorporationTop View PinoutsNot to scale Pin Definitions Sram Read Device OperationSram Write AutoStore OperationMode Selection Hardware Recall Power UpA15 A08 Mode Power Software StorePreventing AutoStore Mode Selection A15 A08 PowerData Protection Noise ConsiderationsMaximum Ratings DC Electrical CharacteristicsOperating Range Capacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsSwitching Waveforms AC Switching CharacteristicsMin Max Sram Read Cycle+LJK,PSHGDQFH $GGUHVV $GGUHVV9DOLG6WDQGE\ $FWLYH Sram Write Cycle #2 CE Controlled3, 18, 19 Parameters Description 20 ns 25 ns 45 ns Unit Min Max AutoStore/Power Up RecallHSB Software Controlled STORE/RECALL Cycle Hardware Store Cycle To Output Active Time when write latch not setDescription 20 ns 25 ns 45 ns Unit Min Max Hardware Store Pulse WidthTruth Table For Sram Operations Inputs/Outputs2 Mode PowerHigh Z Ordering Information CY14B102L-ZS25XIT CY14B102L-ZS25XCTCY14B102L-ZS25XAT CY14B102N-BA25XCTCY14B102L-ZS45XIT CY14B102L-ZS45XCTCY14B102L-ZS45XAT CY14B102L-BA45XCTCY 14 B 102 L ZS P 20 X C T Part Numbering NomenclatureZS Tsop NvsramTOP View Package DiagramsBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Gvch Document HistoryGVCH/AESA GVCH/PYRSUSB Sales, Solutions, and Legal Information

CY14B102L, nvSRAM specifications

Cypress nvSRAM CY14B102L is a sophisticated memory solution designed to bridge the gap between volatile and non-volatile memory technologies. This device offers a unique blend of SRAM speed with the non-volatility of Flash memory, making it an ideal choice for applications that require data retention without the need for continuous power.

One of the standout features of the CY14B102L is its ability to retain data for over 20 years without power, thanks to its innovative non-volatile SRAM technology. This means that critical information can be stored safely during power outages or system failures, ensuring data integrity in mission-critical applications. The device uses a reliable, self-timed write process, which simplifies the write operation and enhances system efficiency by eliminating the need for complex write management processes.

With a capacity of 1 megabit (128 K x 8), the CY14B102L offers ample storage for a wide variety of applications. Its fast access times, typically around 45 ns, make it suitable for high-speed operations typically associated with SRAMs. This rapid access is paramount for real-time applications where delays can lead to critical failures or data corruption.

The CY14B102L utilizes a CMOS process technology that not only contributes to its low power consumption but also ensures high reliability and durability. Operating in the wide temperature range of -40°C to +125°C, this nvSRAM is well-suited for automotive, industrial, and telecommunications applications.

In terms of connectivity, the CY14B102L supports a standard SRAM interface, simplifying integration into existing systems. Additionally, its ease of use is further enhanced by being available in a variety of package options, allowing designers to select the best fit for their needs without compromising on performance.

In conclusion, the Cypress nvSRAM CY14B102L is a powerful memory device that combines the speed of SRAM with non-volatile storage capabilities. With its extended data retention, fast access times, efficient write processes, and robust design, it is an excellent choice for applications that demand both speed and reliability, making it an invaluable asset for engineers looking to optimize system performance while maintaining data integrity.
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