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  | CY7C1223H  | ||
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  | Pin Descriptions | 
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  | Pin  | 
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  | Description  | |||||||||||||
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  | A0, A1, A  | 
  | Input-  | Address Inputs used to select one of the 128K address locations  | .  | Sampled at the rising  | ||||||||||||||||||
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  | Synchronous  | edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active.  | ||||||||||||
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  | A[1:0] are fed to the   | ||||||||||
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  | [A:B]  | 
  | Input-  | Byte Write Select Inputs, active LOW. Qualified with  | 
  | to conduct byte writes to the SRAM.  | |||||||||||||||
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  | BW  | BWE | ||||||||||||||||||||||
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  | Synchronous  | Sampled on the rising edge of CLK.  | ||||||||||||
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  | Input-  | Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a  | ||||||||||||
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  | Synchronous  | global write is conducted (ALL bytes are written, regardless of the values on BW[A:B] and BWE).  | ||||||||||||
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  | Input-  | Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must  | ||||||||||||
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  | Synchronous  | be asserted LOW to conduct a byte write.  | ||||||||||||
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  | CLK | 
  | Input-  | Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the  | ||||||||||||||||||||
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  | Clock  | burst counter when ADV is asserted LOW, during a burst operation.  | ||||||||||||
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  | Input-  | Chip Enable | 1  | Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction  | ||||||||||||||
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  | CE  | |||||||||||||||||||||||
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  | Synchronous  | with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled  | ||||||||||||
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  | only when a new external address is loaded.  | ||||||||||
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  | CE2 | 
  | Input-  | Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction  | ||||||||||||||||||||
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  | Synchronous  | with CE1 and CE3 to select/deselect the device. CE2 is sampled only when a new external  | ||||||||||||
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  | address is loaded.  | ||||||||||
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  | 3  | 
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  | Input-  | Chip Enable 3 Input, active LOW. Sampled on | the  | rising edge of CLK. Used in conjunction  | ||||||||||||||
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  | Synchronous  | with CE1 and CE2 to select/deselect the device. CE3 is sampled only when a new external  | ||||||||||||
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  | address is loaded  | ||||||||||
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  | Input-  | Output Enable, asynchronous input, active LOW. Controls the direction of the I/O pins. When  | |||||||||||||||
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  | Asynchronous  | LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are   | ||||||||||||
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  | as input data pins. OE is masked during the first clock of a read cycle when emerging from a  | ||||||||||
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  | deselected state.  | ||||||||||
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  | Input-  | Advance Input signal, sampled on the rising edge of CLK, active LOW. When asserted, it  | |||||||||||||
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  | Synchronous  | automatically increments the address in a burst cycle.  | ||||||||||||
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  | Input-  | Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When  | ||||||||||||
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  | Synchronous | asserted LOW, addresses presented to the device are captured in the address registers.  | A[1:0]  | 
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  | are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP  | ||||||||||
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  | is recognized. ASDP is ignored when CE1 is deasserted HIGH.  | ||||||||||
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  | Input-  | Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When  | ||||||||||||
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  | Synchronous  | asserted LOW, addresses presented to the device are captured in the address registers.  | A[1:0]  | 
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  | are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP  | ||||||||||
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  | ZZ  | 
  | Input-  | ZZ “sleep” Input, active HIGH. When asserted HIGH places the device in a   | ||||||||||||||||||||
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  | Asynchronous  | “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or  | ||||||||||||
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  | left floating. ZZ pin has an internal   | ||||||||||
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  | DQs | 
  | I/O-  | Bidirectional Data I/O lines. As inputs, they feed into an   | ||||||||||||||||||||
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  | Synchronous  | by the rising edge of CLK. As outputs, they deliver the data contained in the memory location  | ||||||||||||||||||||
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  | specified by the addresses presented during the previous clock rise of the read cycle. The  | ||||||||||
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  | direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs.  | ||||||||||
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  | When HIGH, DQs and DQP[A:B] are placed in a   | ||||||||||
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  | VDD  | 
  | Power Supply  | Power supply inputs to the core of the device.  | ||||||||||||||||||||
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  | Ground  | Ground for the core of the device.  | ||||||||||||||||||||
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  | I/O Power  | Power supply for the I/O circuitry.  | ||||||||||||||||||||
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  | I/O Ground  | Ground for the I/O circuitry. | ||||||||||||||||||||
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  | MODE | 
  | Input-  | Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left  | ||||||||||||||||||||
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  | Static | floating selects interleaved burst sequence. This is a strap pin and should remain static during  | ||||||||||||
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  | device operation. Mode Pin has an internal   | ||||||||||
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  | NC  | 
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  | No Connects. Not internally connected to the die. 4M, 9M, 18M, 72M, 144M, 288M, 576M, and  | ||||||||||||||||||
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  | 1G are address expansion pins and are not internally connected to the die.  | ||||||||||
Document #:   | 
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  | Page 4 of 16  | ||||||||||||||||
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