Cypress CY7C1316CV18, CY7C1318CV18, CY7C1320CV18, CY7C1916CV18 manual TAP Controller State Diagram

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CY7C1316CV18, CY7C1916CV18

CY7C1318CV18, CY7C1320CV18

TAP Controller State Diagram

The state diagram for the TAP controller follows. [9]

TEST-LOGIC RESET

TEST-LOGIC/ IDLE

1		1	1
1	SELECT	1	SELECT
	DR-SCAN		IR-SCAN
	0		0
	1		1

CAPTURE-DR		CAPTURE-IR
0		0
SHIFT-DR	0	SHIFT-IR	0
1		1
EXIT1-DR	1	EXIT1-IR	1
EXIT1-DR		EXIT1-IR
0		0
PAUSE-DR	0	PAUSE-IR	0
1		1
0		0
EXIT2-DR		EXIT2-IR
1		1
UPDATE-DR		UPDATE-IR
1		1
0		0

Note

9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.

Document Number: 001-07160 Rev. *E

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1316CV18Logic Block Diagram CY7C1916CV18 CLKBWS Logic Block Diagram CY7C1318CV18Logic Block Diagram CY7C1320CV18 CY7C1316CV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1916CV18 2M xCY7C1318CV18 1M x CY7C1320CV18 512K xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview SRAM#1 ZQ Application ExampleEcho Clocks SRAM#2First Address External Second Address Internal Write Cycle DescriptionsOperation CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitSwitching Characteristics Parameter Min MaxParameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 200 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, CY7C1318CV18 specifications

Cypress Semiconductor, a leading provider of high-performance memory solutions, offers a range of Static Random-Access Memory (SRAM) products ideal for various applications. Among these are the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18, each designed to meet the demands of modern electronic systems with distinctive features, technologies, and characteristics.

The CY7C1320CV18 is a high-performance 2-Mbit SRAM that operates at a voltage of 1.8V. Designed with speed in mind, it has access times as low as 12 ns, making it suitable for applications requiring quick data retrieval. The device features a simple asynchronous interface, allowing it to be easily integrated into various circuits. With a low power consumption profile and the ability to operate under a wide temperature range, the CY7C1320CV18 is an ideal choice for battery-operated devices and industrial environments.

Following closely, the CY7C1916CV18 is a highly integrated, 16-Mbit synchronous SRAM. This device stands out due to its robust data transfer capabilities, supporting a single-cycle read and write operation, which greatly enhances system performance. The device operates with a supply voltage of 1.8V and features an impressive latency, making it perfect for high-speed applications such as digital signal processing and telecommunications. The unique pipelined architecture allows for higher throughput and efficiency in memory access.

The CY7C1316CV18 is another notable member of this family, featuring 16K x 8 bits of memory. It is characterized by low power consumption and a fast access time, which helps to reduce latency in critical applications. With a simple asynchronous interface and competitive pricing, the CY7C1316CV18 is suitable for consumer electronics and automotive applications that require reliable performance.

Lastly, the CY7C1318CV18 is a comprehensive solution featuring 32K x 8 bits of memory. This device also operates with low power and high speed, making it efficient for caching, buffering, and temporary storage applications. Its compatibility with industry standards makes it easily integrable into existing systems.

In summary, the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18 SRAM devices from Cypress Semiconductor showcase cutting-edge technology, high performance, and versatility, catering to the evolving needs of today's electronics, from telecommunications to consumer devices. Their low power consumption, high-speed access, and reliable data integrity make them essential components in modern electronic designs.