Cypress CY7C1316CV18, CY7C1318CV18, CY7C1320CV18 manual Pin Definitions, Pin Name Pin Description

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CY7C1316CV18, CY7C1916CV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1318CV18, CY7C1320CV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Name

IO

 

 

 

 

Pin Description

 

 

DQ[x:0]

Input Output-

Data Input Output Signals. Inputs are sampled on the rising edge of K and

 

clocks during valid write

 

K

 

 

 

 

 

 

 

 

Synchronous

operations. These pins drive out the requested data during a read operation. Valid data is driven out on

 

 

 

 

 

 

 

 

 

the rising edge of both the C and C clocks during read operations or K and K when in single clock mode.

 

 

 

 

 

 

 

 

 

When read access is deselected, Q[x:0] are automatically tri-stated.

 

 

 

 

 

 

 

 

 

CY7C1316CV18 DQ[7:0]

 

 

 

 

 

 

 

 

 

CY7C1916CV18 DQ[8:0]

 

 

 

 

 

 

 

 

 

CY7C1318CV18 DQ[17:0]

 

 

 

 

 

 

 

 

 

CY7C1320CV18 DQ[35:0]

 

 

 

 

 

 

 

 

Input-

Synchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition

 

 

LD

 

 

 

 

 

 

 

 

Synchronous

includes address and read/write direction. All transactions operate on a burst of 2 data.

 

 

 

 

 

 

 

0,

Input-

Nibble Write Select 0, 1 Active LOW (CY7C1316CV18 only). Sampled on the rising edge of the K

 

 

NWS

 

 

NWS1

Synchronous

and K clocks during write operations. Used to select which nibble is written into the device during the

 

 

 

 

 

 

 

 

 

current portion of the write operations. Nibbles not written remain unaltered.

 

 

 

 

 

 

 

 

 

NWS0 controls D[3:0] and NWS1 controls D[7:4].

 

 

 

 

 

 

 

 

 

All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select

 

 

 

 

 

 

 

 

 

ignores the corresponding nibble of data and it is not written into the device.

 

 

 

 

 

 

0,

Input-

Byte Write Select 0, 1, 2, and 3 Active LOW. Sampled on the rising edge of the K and

 

 

clocks during

 

 

BWS

K

 

 

BWS1,

Synchronous

write operations. Used to select which byte is written into the device during the current portion of the Write

 

 

BWS2,

 

operations. Bytes not written remain unaltered.

 

 

BWS3

 

CY7C1916CV18 BWS0

controls D[8:0]

 

 

 

 

 

 

 

 

 

CY7C1318CV18 BWS0

controls D[8:0] and

BWS

1 controls D

[17:9].

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1320CV18 BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls

 

 

 

 

 

 

 

 

 

D[35:27].

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select

 

 

 

 

 

 

 

 

 

ignores the corresponding byte of data and it is not written into the device.

 

 

A, A0

Input-

Address Inputs. These address inputs are multiplexed for both read and write operations. Internally, the

 

 

 

 

 

 

 

 

Synchronous

device is organized as 2M x 8 (2 arrays each of 1M x 8) for CY7C1316CV18 and 2M x 9 (2 arrays each

 

 

 

 

 

 

 

 

 

of 1M x 9) for CY7C1916CV18, 1M x 18 (2 arrays each of 512K x 18) for CY7C1318CV18, and 512K x

 

 

 

 

 

 

 

 

 

36 (2 arrays each of 256K x 36) for CY7C1320CV18.

 

 

 

 

 

 

 

 

 

CY7C1316CV18 – Because the least significant bit of the address internally is a ‘0’, only 20 external

 

 

 

 

 

 

 

 

 

address inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1916CV18 – Because the least significant bit of the address internally is a ‘0’, only 20 external

 

 

 

 

 

 

 

 

 

address inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1318CV18 – A0 is the input to the burst counter. These are incremented internally in a linear fashion.

 

 

 

 

 

 

 

 

 

20 address inputs are needed to access the entire memory array.

 

 

 

 

 

 

 

 

 

CY7C1320CV18 – A0 is the input to the burst counter. These are incremented internally in a linear fashion.

 

 

 

 

 

 

 

 

 

19 address inputs are needed to access the entire memory array. All the address inputs are ignored when

 

 

 

 

 

 

 

 

 

the appropriate port is deselected.

 

 

 

 

 

 

Input-

Synchronous Read/Write Input. When

 

is LOW, this input designates the access type (read when

 

 

R/W

LD

 

 

 

 

 

 

 

 

Synchronous

R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times

 

 

 

 

 

 

 

 

 

around the edge of K.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CInput Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 9 for more information.

CInput Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 9 for more information.

K

Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device

 

and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising

 

edge of K.

KInput Clock Negative Input Clock Input. K is used to capture synchronous data being presented to the device and to drive out data through Q[x:0] when in single clock mode.

Document Number: 001-07160 Rev. *E

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Contents Functional Description FeaturesConfigurations Selection GuideDoff Logic Block Diagram CY7C1316CV18Logic Block Diagram CY7C1916CV18 CLKLogic Block Diagram CY7C1318CV18 Logic Block Diagram CY7C1320CV18BWS CY7C1316CV18 2M x Pin ConfigurationBall Fbga 13 x 15 x 1.4 mm Pinout CY7C1916CV18 2M xCY7C1318CV18 1M x CY7C1320CV18 512K xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview SRAM#1 ZQ Application ExampleEcho Clocks SRAM#2First Address External Second Address Internal Write Cycle DescriptionsOperation CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitSwitching Characteristics Parameter Min MaxParameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 200 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, CY7C1318CV18 specifications

Cypress Semiconductor, a leading provider of high-performance memory solutions, offers a range of Static Random-Access Memory (SRAM) products ideal for various applications. Among these are the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18, each designed to meet the demands of modern electronic systems with distinctive features, technologies, and characteristics.

The CY7C1320CV18 is a high-performance 2-Mbit SRAM that operates at a voltage of 1.8V. Designed with speed in mind, it has access times as low as 12 ns, making it suitable for applications requiring quick data retrieval. The device features a simple asynchronous interface, allowing it to be easily integrated into various circuits. With a low power consumption profile and the ability to operate under a wide temperature range, the CY7C1320CV18 is an ideal choice for battery-operated devices and industrial environments.

Following closely, the CY7C1916CV18 is a highly integrated, 16-Mbit synchronous SRAM. This device stands out due to its robust data transfer capabilities, supporting a single-cycle read and write operation, which greatly enhances system performance. The device operates with a supply voltage of 1.8V and features an impressive latency, making it perfect for high-speed applications such as digital signal processing and telecommunications. The unique pipelined architecture allows for higher throughput and efficiency in memory access.

The CY7C1316CV18 is another notable member of this family, featuring 16K x 8 bits of memory. It is characterized by low power consumption and a fast access time, which helps to reduce latency in critical applications. With a simple asynchronous interface and competitive pricing, the CY7C1316CV18 is suitable for consumer electronics and automotive applications that require reliable performance.

Lastly, the CY7C1318CV18 is a comprehensive solution featuring 32K x 8 bits of memory. This device also operates with low power and high speed, making it efficient for caching, buffering, and temporary storage applications. Its compatibility with industry standards makes it easily integrable into existing systems.

In summary, the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18 SRAM devices from Cypress Semiconductor showcase cutting-edge technology, high performance, and versatility, catering to the evolving needs of today's electronics, from telecommunications to consumer devices. Their low power consumption, high-speed access, and reliable data integrity make them essential components in modern electronic designs.