Cypress CY7C1318CV18, CY7C1320CV18 manual Maximum Ratings, DC Electrical Characteristics

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CY7C1316CV18, CY7C1916CV18 CY7C1318CV18, CY7C1320CV18

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with Power Applied.. –55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +2.9V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC Applied to Outputs in High-Z

–0.5V to VDDQ + 0.3V

DC Input Voltage [11]

–0.5V to V + 0.3V

 

 

DD

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage (MIL-STD-883, M 3015)....

>2001V

Latch up Current

.....................................................

 

>200 mA

Operating Range

 

 

 

 

 

 

 

 

 

Ambient

VDD [15]

VDDQ [15]

Range

 

Temperature (TA)

Commercial

 

0°C to +70°C

1.8 ± 0.1V

1.4V to

 

 

 

 

VDD

Industrial

 

–40°C to +85°C

 

Electrical Characteristics

DC Electrical Characteristics

Over the Operating Range [12]

Parameter

Description

Test Conditions

 

Min

Typ

Max

Unit

VDD

Power Supply Voltage

 

 

 

1.7

1.8

1.9

V

VDDQ

IO Supply Voltage

 

 

 

1.4

1.5

VDD

V

VOH

Output HIGH Voltage

Note 16

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOL

Output LOW Voltage

Note 17

 

 

VDDQ/2 – 0.12

 

VDDQ/2 + 0.12

V

VOH(LOW)

Output HIGH Voltage

IOH = −0.1 mA, Nominal Impedance

 

VDDQ – 0.2

 

VDDQ

V

VOL(LOW)

Output LOW Voltage

IOL = 0.1 mA, Nominal Impedance

 

VSS

 

0.2

V

VIH

Input HIGH Voltage

 

 

 

VREF + 0.1

 

VDDQ + 0.3

V

VIL

Input LOW Voltage

 

 

 

–0.3

 

VREF – 0.1

V

IX

Input Leakage Current

GND ≤ VI ≤ VDDQ

 

 

−5

 

5

μA

IOZ

Output Leakage Current

GND ≤ VI ≤ VDDQ, Output Disabled

 

−5

 

5

μA

VREF

Input Reference Voltage [18]

Typical Value = 0.75V

 

 

0.68

0.75

0.95

V

IDD [19]

VDD Operating Supply

VDD = Max,

267 MHz

(x8)

 

 

775

mA

 

 

IOUT = 0 mA,

 

 

 

 

 

 

 

 

 

(x9)

 

 

780

 

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

 

 

 

(x18)

 

 

805

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

855

 

 

 

 

 

 

 

 

 

 

 

 

 

250 MHz

(x8)

 

 

705

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

710

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

730

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

775

 

 

 

 

 

 

 

 

 

 

 

 

 

200 MHz

(x8)

 

 

575

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

580

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

600

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

635

 

 

 

 

 

 

 

 

 

 

 

 

 

167 MHz

(x8)

 

 

490

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

(x9)

 

 

490

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x18)

 

 

510

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(x36)

 

 

540

 

 

 

 

 

 

 

 

 

 

Notes

15.Power up: assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

16.Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.

17.Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.

18.VREF(min) = 0.68V or 0.46VDDQ, whichever is larger, VREF(max) = 0.95V or 0.54VDDQ, whichever is smaller.

19.The operation current is calculated with 50% read cycle and 50% write cycle.

Document Number: 001-07160 Rev. *E

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Contents Features ConfigurationsFunctional Description Selection GuideLogic Block Diagram CY7C1316CV18 Logic Block Diagram CY7C1916CV18Doff CLKBWS Logic Block Diagram CY7C1318CV18Logic Block Diagram CY7C1320CV18 Pin Configuration Ball Fbga 13 x 15 x 1.4 mm PinoutCY7C1316CV18 2M x CY7C1916CV18 2M xCY7C1318CV18 1M x CY7C1320CV18 512K xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Power Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Application Example Echo ClocksSRAM#1 ZQ SRAM#2Write Cycle Descriptions OperationFirst Address External Second Address Internal CommentsBWS0 Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitSwitching Characteristics Parameter Min MaxParameter Min Max Output Times DLL TimingSwitching Waveforms DON’T Care UndefinedOrdering Information 200 Package Diagram Ball Fbga 13 x 15 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC Solutions

CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, CY7C1318CV18 specifications

Cypress Semiconductor, a leading provider of high-performance memory solutions, offers a range of Static Random-Access Memory (SRAM) products ideal for various applications. Among these are the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18, each designed to meet the demands of modern electronic systems with distinctive features, technologies, and characteristics.

The CY7C1320CV18 is a high-performance 2-Mbit SRAM that operates at a voltage of 1.8V. Designed with speed in mind, it has access times as low as 12 ns, making it suitable for applications requiring quick data retrieval. The device features a simple asynchronous interface, allowing it to be easily integrated into various circuits. With a low power consumption profile and the ability to operate under a wide temperature range, the CY7C1320CV18 is an ideal choice for battery-operated devices and industrial environments.

Following closely, the CY7C1916CV18 is a highly integrated, 16-Mbit synchronous SRAM. This device stands out due to its robust data transfer capabilities, supporting a single-cycle read and write operation, which greatly enhances system performance. The device operates with a supply voltage of 1.8V and features an impressive latency, making it perfect for high-speed applications such as digital signal processing and telecommunications. The unique pipelined architecture allows for higher throughput and efficiency in memory access.

The CY7C1316CV18 is another notable member of this family, featuring 16K x 8 bits of memory. It is characterized by low power consumption and a fast access time, which helps to reduce latency in critical applications. With a simple asynchronous interface and competitive pricing, the CY7C1316CV18 is suitable for consumer electronics and automotive applications that require reliable performance.

Lastly, the CY7C1318CV18 is a comprehensive solution featuring 32K x 8 bits of memory. This device also operates with low power and high speed, making it efficient for caching, buffering, and temporary storage applications. Its compatibility with industry standards makes it easily integrable into existing systems.

In summary, the CY7C1320CV18, CY7C1916CV18, CY7C1316CV18, and CY7C1318CV18 SRAM devices from Cypress Semiconductor showcase cutting-edge technology, high performance, and versatility, catering to the evolving needs of today's electronics, from telecommunications to consumer devices. Their low power consumption, high-speed access, and reliable data integrity make them essential components in modern electronic designs.
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